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US 8,474,126 B2Granted
Manufacturing method of semiconductor device
AssigneeFujitsu Limited
InventorsTakeshi Shioga, Kazuaki Kurihara
Life of this patent
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Abstract
A manufacturing method of a semiconductor device include forming a capacitor by forming an oxide film on a surface of a valve metal based on anodic oxidization and by forming a conductive part made of a conductive material on the oxide film; adhering the capacitor on a semiconductor element mounted on a supporting substrate; and coupling the capacitor to the supporting substrate via an outside connection terminal.
Claims4
A manufacturing method of a semiconductor device, comprising:
- forming a concave part in a valve metal by etching;
- performing anodic oxidization on the valve metal to form an anodic oxide film in the concave part;
- forming a capacitor by forming a conductive part made of a conductive material on the anodic oxide film;
- adhering the capacitor on a semiconductor element mounted on a supporting substrate such that the conductive part faces the semiconductor element and overhangs the semiconductor element;
- and
- coupling the capacitor to the supporting substrate using an outside connection terminal.
3 more elements
A manufacturing method of a semiconductor device, comprising:
- forming a concave part in a valve metal by etching;
- performing anodic oxidization on the valve metal to form an anodic oxide film in the concave part;
- forming a capacitor by forming a conductive part made of a conductive material on the anodic oxide film;
- adhering the capacitor on a semiconductor integrated circuit device mounted on a supporting substrate such that the conductive part faces the semiconductor element and overhangs the semiconductor integrated circuit device;
- and
- coupling the capacitor to the supporting substrate using an outside connection terminal.
3 more elements
Dependencies are inferred from the claim text.