Method for forming a multilayer structure
AssigneesCommissariat A L'energie Atomique Et Aux Energies Alternatives, STMicroelectronics (Crolles 2) SAS
InventorsSébastien Desplobain, Frederic-Xavier Gaillard, Yves Morand, Fabrice Nemouchi
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Abstract
The method for forming a multilayer structure on a substrate comprises providing a stack successively comprising an electron hole blocking layer, a first layer made from N-doped semiconductor material having a dopant concentration greater than or equal to 1018 atoms/cm3 or P-doped semiconductor material, and a second layer made from semiconductor material of different nature. A lateral electric contact pad is made between the first layer and the substrate, and the material of the first layer is subjected to anodic treatment in an electrolyte.
Claims13
A method for forming a multilayer structure on a substrate, comprising the following steps:
- providing a stack successively comprising a hole blocking layer, reactive to anodic treatment made from N-doped semiconductor material having a dopant concentration greater than or equal to 1018 atoms/cm3 or P-doped semiconductor material, and a second layer made from semiconductor resistant to anodic treatment,
- making a lateral electric contact pad between the first layer and the substrate, and
- stack to said anodic treatment in an electrolyte.
Dependencies are inferred from the claim text.