# US 8,465,906 B2 · Method and mask for enhancing the resolution of patterning 2-row holes

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- Number: US 8,465,906 B2
- Document ID: US8465906B2
- Status: Granted
- Kind: B2
- Application number: 13/081,268
- Filed: 2011-04-06
- Published: 2012-10-11
- Granted: 2013-06-18
- Earliest claimed: 2011-04-06
- Assignees: SanDisk Technologies LLC
- Applicants: Chun-Ming Wang; Chenche Huang; Masaaki Higashitani
- Inventors: Chun-Ming Wang; Chenche Huang; Masaaki Higashitani
- Web page: https://patentgrep.com/patent/US8465906B2

## CPC

- G03F 7/70433: {Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors}
- G03F 1/26: Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F 1/32: Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof
- G03F 1/36: Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
- G03F 7/70091: {Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

A photolithography mask including a plurality of mask features. Adjacent mask features are separated by a gap and are offset from each other such that individual mask features have one-side dense portions and two-side dense portions. Also a photolithography method that includes a step of providing a substantially opaque mask having N stepped rows of offset, substantially transparent, rectangular mask features, where N is an integer and N≧2. The method also includes illuminating a photoresist layer located over an underlying material with dipole illumination through the substantially transparent, rectangular mask features in the substantially opaque mask to form 2N rows of exposed regions in the photoresist layer. The exposed regions have a substantially elliptical or substantially circular shape when viewed from above the photoresist layer.

## Claims

### Claim 1

A photolithography method, comprising:
providing a substantially opaque mask having N stepped rows of offset, substantially transparent, rectangular mask features, where N is an integer and N≧2; and
illuminating a photoresist layer located over an underlying material layer with dipole illumination through the substantially transparent, rectangular mask features of the substantially opaque mask to form 2N rows of exposed regions in the photoresist layer;
wherein the exposed regions have a substantially elliptical or a substantially circular shape when viewed from above the photoresist layer;
wherein:
adjacent rectangular mask features in each row of the offset, substantially transparent, rectangular mask features are separated by a gap and the rectangular mask features are offset from each other such that individual mask features have one-side dense portions and two-side dense portions;
each of the rectangular individual mask features has a characteristic length which corresponds to a shorter side length for each of the individual mask features;
for the one-side dense portions, a nearest adjacent mask feature is more than 3 characteristic lengths distant;
for the two-side dense portions, a nearest adjacent mask feature is less than 3 characteristic lengths distant;
the individual rectangular mask features comprise longer sides oriented in a first direction and shorter sides oriented in a second direction perpendicular to the first direction;
the gap is measured between the longer sides of adjacent mask features;
the offset is measured as an orthogonal displacement of shorter sides of adjacent mask features in the first direction;
each gap and each offset are substantially the same in between adjacent mask features in the N stepped rows of offset rectangular mask features;
the one-side dense portions are located at two opposing shorter sides of each mask feature, which is offset with respect to an adjacent mask feature;
the two-side dense portions are located in between the two one-side dense portions;
a distance measured orthogonally from a first mask feature centerline oriented in the first direction to an adjacent second mask feature centerline oriented in the first direction defines a pitch, and the pitch is between 60 and 80 nm;
an angle, in between a first point located at an intersection of the first mask feature centerline and a first shorter side of a first mask feature with a corresponding second point located at an intersection of the second mask feature centerline and a corresponding first shorter side of a second mask feature, ranges from 55 to 70 degrees; and
a pitch, in between the exposed regions in the photoresist layer in each of the 2N rows, ranges from 70 to 85 nm.

### Claim 2 (depends on 1)

The method of claim 1, wherein:
the angle ranges from 57 to 68 degrees;
a CB pitch imaginary line connects the first point to the second point; and
the CB pitch imaginary line has a length ranges that from 70 to 90 nm.

### Claim 3 (depends on 1)

The method of claim 1, wherein:
a first length of each of the longer sides of the mask features ranges from 63 to 73 nm;
a second length of each of the shorter sides of the mask features ranges from 33 to 43 nm;
the exposed regions have the substantially elliptical shape of approximately 30 to 50 nm in length and 15 to 25 nm in width or the substantially circular shape of approximately 15 to 25 nm in radius;
the offset between adjacent mask features ranges from 30 to 70 nm; and
the gap between adjacent mask features is greater than 30 nm.

### Claim 4 (depends on 1)

The method of claim 1, wherein the substantially opaque mask comprises a square or rectangular mask which is rotated at an angle ranging from 25 to 35 degrees with respect to an imaginary horizontal line in a photolithography exposure tool, such that the N stepped rows of offset mask features extend along an imaginary line which is oriented substantially parallel to the imaginary horizontal line and at an angle ranging from 25 to 35 degrees to a side of the substantially opaque mask.

### Claim 5 (depends on 1)

The method of claim 1, further comprising:
developing the exposed photoresist layer, wherein the photoresist layer comprises a negative photoresist;
removing unexposed portions of the photoresist layer to leave pillar shaped exposed regions of the developed photoresist layer; and
depositing a blocking material layer around the pillar shaped exposed photoresist regions;
removing the pillar shaped exposed photoresist regions to uncover portions of the underlying material layer in openings in the blocking material layer; and
removing the uncovered portions of the underlying material layer, thereby forming 2N rows of openings in the underlying material layer.

### Claim 6 (depends on 1)

The method of claim 1, further comprising:
developing the exposed photoresist layer, wherein the photoresist layer comprises a negative photoresist;
removing unexposed portions of the photoresist layer to leave pillar shaped exposed regions of the developed photoresist layer; and
removing portions of the underlying material layer that are not covered by the pillar shaped exposed photoresist regions, thereby forming 2N rows of pillars in the underlying material layer.

### Claim 7 (depends on 6)

The method of claim 6, where the underlying material layer comprises at least one semiconductor layer, and the 2N rows of pillars comprise 2N rows of pillar shaped memory cells, each comprising a semiconductor steering element and a storage element.

### Claim 8 (depends on 1)

The method of claim 1, further comprising:
developing the exposed photoresist layer, wherein the photoresist layer comprises a positive photoresist;
removing the exposed regions in the developed photoresist layer to uncover portions of the underlying material layer; and
removing the uncovered portions of the underlying material layer, thereby forming 2N rows of openings in the underlying material layer.

### Claim 9 (depends on 8)

The method of claim 8, wherein:
the underlying material layer comprises an insulating layer located over a NAND memory device; and
the 2N rows of openings comprise contact openings to the NAND memory device.

### Claim 10 (depends on 8)

The method of claim 8, wherein:
the underlying material layer comprises an insulating layer located over a substrate; and
the 2N rows of openings comprise 2N rows of openings in the insulating layer in which 2N rows of damascene pillar shaped memory cells, each comprising a semiconductor steering element and a storage element, are formed.