Radiation patternable CVD film
AssigneeApplied Materials, Inc.
InventorsTimothy W. Weidman, Timothy Michaelson, Paul Deaton, Nitin K. Ingle, Abhijit Basu Mallick, Amit Chatterjee
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Abstract
Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.
Claims20
A method for forming a radiation sensitive photoresist on a substrate comprising:
- forming by chemical vapor deposition a deposited layer by flowing a silicon precursor containing substituents with cross-linkable moieties into a chemical vapor deposition apparatus containing the substrate;
- contacting the deposited layer with a plasma;
- and
- selectively exposing portions of the deposited layer to radiation to create a pattern having exposed portions and unexposed portions in which the exposed portions of the deposited layer contain cross-linked moieties that form a film on the substrate that are less soluble to developer solution than unexposed portions of the deposited layer.
A method of providing a substantially oxidized photo-patterned film, the method comprising:
- providing a substrate;
- depositing a film onto the substrate using an Si—H containing precursor, wherein deposition comprises plasma-enhanced chemical vapor deposition;
- exposing at least part of the deposited film to to provide a photo-patterned film;
- treating the photo-patterned film to provide a substantially oxidized photo-patterned film.
A method for forming a patterned photoresist on a substrate comprising:
- depositing a layer by chemical vapor deposition on a substrate by flowing an Si—H containing precursor containing cross-linkable moieties into a chemical vapor deposition chamber containing the substrate;
- contacting the deposited layer with a plasma, wherein the plasma comprises nitrogen;
- selectively exposing portions of the layer to radiation provide exposed portions and unexposed portions to form a pattern in which exposed portions are more cross-linked than unexposed portions;
- contacting the unexposed portions of the deposited layer with developer solution, wherein the developer solution comprises TMAH, and removing the unexposed portions from the substrate.
Dependencies are inferred from the claim text.