# US 8,465,901 B2 · Methods of adjusting dimensions of resist patterns

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- Number: US 8,465,901 B2
- Document ID: US8465901B2
- Status: Granted
- Kind: B2
- Application number: 12/825,096
- Filed: 2010-06-28
- Published: 2010-12-30
- Granted: 2013-06-18
- Earliest claimed: 2009-06-26
- Assignees: Rohm and Haas Electronic Materials LLC
- Applicants: Young Cheol Bae; Thomas Cardolaccia; Yi Liu
- Inventors: Young Cheol Bae; Thomas Cardolaccia; Yi Liu
- Web page: https://patentgrep.com/patent/US8465901B2

## CPC

- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- G03F 7/0035: {Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface}
- G03F 7/40: Treatment after imagewise removal, e.g. baking
- H10P 76/204: {of organic photoresist masks}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Methods of adjusting dimensions of resist patterns are provided. The methods allow for control of photoresist pattern dimensions and find particular applicability in resist pattern rework in semiconductor device manufacturing.

## Claims

### Claim 1

A method of adjusting dimensions of a resist pattern, comprising:
(a) providing a semiconductor substrate comprising one or more layers to be patterned;
(b) applying a first layer of a photosensitive composition over the one or more layers to be patterned;
(c) exposing the first layer to activating radiation through a patterned photomask;
(d) developing the exposed first layer to form a resist pattern;
(e) measuring a dimension of a feature of the resist pattern;
(f) comparing the result of the dimension measurement with a predetermined target specification;
(g) heat treating the resist pattern in a first hardbake process;
(h) treating the hardbaked resist pattern with a material effective to make alkaline a surface of the resist pattern;
(i) heat treating the resist pattern in a second hardbake process at a temperature based on the comparison of the result of the dimension measurement with the predetermined target specification;
(j) applying a second layer of a thermally sensitive composition over the one or more layers to be patterned and in contact with the alkaline surface of the resist pattern, wherein the thermally sensitive composition is positive-acting and comprises a resin component and a thermal acid generator;
(k) heat treating the second layer; and
(l) developing the exposed second layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the step of exposing the layer of the first photosensitive composition is conducted with immersion lithography.

### Claim 3 (depends on 1)

The method of claim 1, wherein treating the hardbaked first resist pattern with the material effective to make alkaline a surface of the first resist pattern comprises treating the first resist pattern with an alkaline material and a surfactant.

### Claim 4 (depends on 1)

The method of claim 1, further comprising repeating steps (e), (f), (g), (h), (i), (j), (k) and (l) one or more additional times.

### Claim 5 (depends on 1)

The method of claim 1, wherein the first hardbake process is conducted at a temperature of about 150° C. or higher.

### Claim 6 (depends on 1)

The method of claim 1, wherein the second hardbake process is conducted at a temperature of from 120 to 200° C.

### Claim 7 (depends on 1)

The method of claim 1, wherein a dimension of a feature of the resist pattern after developing the exposed second layer is increased as compared with a corresponding dimension of the resist pattern prior to the first hardbake process.

### Claim 8 (depends on 1)

The method of claim 1, wherein a dimension of a feature of the resist pattern after developing the exposed second layer is decreased as compared with a corresponding dimension of the resist pattern prior to the first hardbake process.

### Claim 9 (depends on 1)

The method of claim 1, wherein treating the hardbaked first resist pattern with the material effective to make alkaline a surface of the first resist pattern comprises treating the first resist pattern with a primary or secondary amine.

### Claim 10 (depends on 9)

The method of claim 9, wherein treating the hardbaked first resist pattern with the material effective to make alkaline a surface of the first resist pattern comprises sequentially treating the first resist pattern with a quaternary ammonium hydroxide solution followed by the primary or secondary amine.

### Claim 11 (depends on 9)

The method of claim 9, wherein the amine is a compound of the following formula (I):
NR—NH2)3 (I)
wherein R is chosen from optionally substituted C1-C6 alkyl groups.

### Claim 12 (depends on 9)

The method of claim 9, wherein the amine is chosen from compounds of the following formulae (III), (IV) and (V):
wherein R1 and R2 are each independently a hydrogen atom or a C1-C10 alkyl group; and n is an integer from 1 to 10.

### Claim 13 (depends on 12)

The method of claim 12, wherein the amine is chosen from compounds of the formula (III).

### Claim 14 (depends on 12)

The method of claim 12, wherein the amine is chosen from compounds of the formula (IV).

### Claim 15 (depends on 12)

The method of claim 12, wherein the amine is chosen from compounds of the formula (V).

### Claim 16 (depends on 1)

The method of claim 1, wherein the hardbaked first resist pattern is treated with the material effective to make alkaline a surface of the first resist pattern in a spin coating process.

### Claim 17 (depends on 1)

The method of claim 1, wherein treating the hardbaked first resist pattern with the material effective to make alkaline a surface of the first resist pattern comprises treating the first resist pattern with an aqueous base developer.

### Claim 18 (depends on 17)

The method of claim 17, wherein the aqueous base developer is a quaternary ammonium hydroxide solution.

### Claim 19 (depends on 18)

The method of claim 18, wherein the quaternary ammonium hydroxide solution is a tetramethylammonium hydroxide solution.

### Claim 20 (depends on 1)

The method of claim 1, wherein steps (a) to (l) are conducted in sequence.