# US 8,465,802 B2 · Chemical vapor deposition reactor and method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,465,802 B2 - Document ID: US8465802B2 - Status: Granted - Kind: B2 - Application number: 12/494,260 - Filed: 2009-06-29 - Published: 2010-02-25 - Granted: 2013-06-18 - Earliest claimed: 2008-07-17 - Applicants: Gang Li - Inventors: Gang Li - Web page: https://patentgrep.com/patent/US8465802B2 ## CPC - C23C 16/45504: {Laminar flow} - C23C 16/4412: {Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps} - C23C 16/45508: {Radial flow} - C23C 16/45574: {Nozzles for more than one gas} - C23C 16/4558: {Perforated rings} - C30B 25/14: Feed and outlet means for the gases; Modifying the flow of the reactive gases - C30B 29/403: {AIII-nitrides} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR ## Abstract A reactor and method for performing chemical vapor deposition are disclosed. A chemical vapor deposition reactor can have a cylindrical chamber that comprises a cylindrical lid support and an annular gas distribution plate. Said chamber can be configured to have a horizontal laminar flow of at least one gas stream in the radial direction and a vertical downward flow of another gas stream over wafers. A large capacity of a CVD reactor with simple structures, easy maintenance and low consumption of reactants can be achieved. High uniformity, repeatability, reproducibility and consistency of depositing layers on wafers can be obtained. ## Claims ### Claim 1 A chemical vapor deposition reactor apparatus, the apparatus comprising: a reactor body having a peripheral side wall defining a reaction chamber; a close element for operatively sealing the reaction chamber, the close element having an outer perimeter directly supported by the side wall; a support element located within the reaction chamber, a portion of the support element being spaced apart from the side wall and being within the reaction chamber for supporting an inner region of the close element, the support element being supportedly coupled to the reactor body; a gas egress passage proximal the support element; and a gas ingress passage located about the periphery of the reaction chamber; a wafer carrier within the reaction chamber for carrying a substrate undergoing chemical vapor deposition. ### Claim 2 (depends on 1) The apparatus according to claim 1, wherein the reactor body has a bottom plate, and the support element being coupled to a portion of the bottom plate that is spaced apart from the side wall. ### Claim 3 (depends on 2) The apparatus according to claim 2, wherein the reactor body defines a substantially cylindrical reaction chamber; and the support element substantially centrally-axially located within the reaction chamber. ### Claim 4 (depends on 3) The apparatus according to claim 3, wherein: the close element is substantially circular. ### Claim 5 (depends on 1) The apparatus according to claim 1, wherein: the support element defines an abutment surface for abutting support of the close element. ### Claim 6 (depends on 1) The apparatus according to claim 1, wherein the wafer carrier is substantially horizontally disposed within the reaction chamber for providing a substantially horizontal wafer reaction surface. ### Claim 7 (depends on 6) The apparatus according to claim 6, wherein the wafer carrier is an annular wafer carrier concentrically located and vertically supported within the reaction chamber; the annular wafer carrier substantially encircling the support element. ### Claim 8 (depends on 6) The apparatus according to claim 6, wherein the reactor body has a bottom plate, wherein the support element extends between the bottom plate and the close element when in use, and wherein the wafer carrier has an circumferential inner wall encircling and displaced from the support element for defining a gas discharge passage therebetween. ### Claim 9 (depends on 1) The apparatus according to claim 1, wherein the gas ingress passage comprises a gas inlet ring located about the periphery of the reaction chamber. ### Claim 10 (depends on 9) The apparatus according to claim 9, wherein the gas inlet ring includes a plurality of vertically-spaced annular gas injectors, each annular gas injector is connected to a separate gas supply manifold. ### Claim 11 (depends on 9) The apparatus according to claim 9, wherein the gas egress passage is defined by a gas discharge ring horizontally disposed about the support element. ### Claim 12 (depends on 1) The apparatus according to claim 1, further comprising a gas injection plate located proximal to the top of the reaction chamber, wherein the gas injection plate has a plurality of regularly-distributed downwardly-directed gas apertures. ### Claim 13 (depends on 1) A method used to perform chemical vapor deposition, the method comprising the steps of: (a) presenting a reactor apparatus according to claim 1; (b) presenting a substrate on the wafer carrier within the reaction chamber; (c) injecting gas from the periphery of the reaction chamber in a substantially radial inward direction; and (d) evacuating exhaust gases proximal the support element, thereby to define a substantially-inwardly directed laminar flow of the gases over a surface of wafer carrier.