# US 8,465,691 B1 · Method for manufacturing indium tin oxide nanowires

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- Number: US 8,465,691 B1
- Document ID: US8465691B1
- Status: Granted
- Kind: B1
- Application number: 12/787,774
- Filed: 2010-05-26
- Granted: 2013-06-18
- Earliest claimed: 2010-05-26
- Assignees: The Boeing Company
- Applicants: Chaoyin Zhou; Amanda Phelps; Richard W. Burns; Wen Li
- Inventors: Chaoyin Zhou; Amanda Phelps; Richard W. Burns; Wen Li
- Web page: https://patentgrep.com/patent/US8465691B1

## CPC

- D01F 9/08: of inorganic material (working or processing of metal wire B21F; from softened glass, minerals or slags C03B37/00)
- C01G 19/02: Oxides
- D04H 1/4209: Inorganic fibres
- D04H 1/728: by electro-spinning {(electro-spinning methods and apparatus D01D5/0007)}
- H01B 1/08: oxides
- Y10T 428/12444: Embodying fibers interengaged or between layers [e.g., paper, etc.]
- D01F: CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20)
- D04H: MAKING TEXTILE FABRICS, e.g. FROM FIBRES OR FILAMENTARY MATERIAL (weaving D03; knitting D04B; braiding D04C; net-making D04G; sewing D05B; tufting D05C; finishing non-woven fabrics D06); FABRICS MADE BY SUCH PROCESSES OR APPARATUS, e.g. FELTS, NON-WOVEN FABRICS; COTTON-WOOL; WADDING {; NON-WOVEN FABRICS FROM STAPLE FIBRES, FILAMENTS OR YARNS, BONDED WITH AT LEAST ONE WEB-LIKE MATERIAL DURING THEIR CONSOLIDATION}(non-woven fabrics having an intermediate or external layer of a different kind, e.g. of woven fabric, B32B)
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A method for manufacturing indium tin oxide nanowires by preparing a solution that includes an indium-containing species, a tin-containing species and a polymeric material, wherein the solution has a molar ratio of tin to indium in a range from about 5 to about 15 percent, electrospinning fibers using the solution, and heating the fibers to a calcination temperature and maintaining the fibers at the calcination temperature for a predetermined calcination time.

## Claims

### Claim 1

A method for manufacturing indium tin oxide nanowires with a resistivity of about 10−3 Ω-cm, the method comprising:
preparing a precursor aqueous solution comprising a tin-containing specie and an indium-containing specie wherein the molar ratio of the tin-containing specie to the indium-containing specie is about 5 to about 15%;
preparing a polymer solution comprising an organic solvent;
mixing the precursor solution with the polymer solution to produce an electrospinning solution or sol-gel wherein together the tin-containing specie and the indium-containing specie are from about 2% to about 15% by weight of the electrospinning solution or sol-gel;
electrospinning the electrospinning solution or sol-gel at a relative humidity from about 15 to about 60 percent while irradiating the electrospinning solution or sol-gel with infrared radiation to provide the indium-tin nanowires with a cross-sectional thickness of from about 1 to about 100 micrometers;
drying the indium tin oxide nanowires at a drying temperature of about 100° C. to about 200° C. to a moisture content of less than about 20% by weight;
heating the indium tin oxide nanowires, at a rate between about 2 and about 20° C. per minute from the drying temperature to a calcination temperature of from about 700° C. to about 1000° C.; and
maintaining the calcination temperature for a time from two hours to one week to provide indium tin oxide nanowires with a resistivity of about 10−3 Ω-cm.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the molar ratio of the tin-containing specie to the indium-containing specie is about 10%.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the organic solvent comprises at least one of ethanol, methanol, tetrahydrofuran, acetonitrile, and acetone.

### Claim 4 (depends on 1)

The method according to claim 1, wherein together the tin-containing specie and the indium-containing specie are about 5% to about 8% by weight of the electrospinning solution or sol-gel.

### Claim 5 (depends on 1)

The method according to claim 1, wherein the drying step is performed in air.

### Claim 6 (depends on 1)

The method according to claim 1, wherein the heating step is performed in air, hydrogen, or a mixture of air and hydrogen.

### Claim 7 (depends on 6)

The method according to claim 6 wherein the heating step is performed in a mixture of air and hydrogen.

### Claim 8 (depends on 6)

The method according to claim 6 wherein the heating step is performed in hydrogen.

### Claim 9 (depends on 1)

The method according to claim 1, wherein the calcination temperature is maintained for about 2 hours.

### Claim 10 (depends on 1)

The method according to claim 1, wherein the calcination temperature is maintained for about one week.