# US 8,465,662 B2 · Composition for wet etching of silicon dioxide

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- Number: US 8,465,662 B2
- Document ID: US8465662B2
- Status: Granted
- Kind: B2
- Application number: 12/887,026
- Filed: 2010-09-21
- Published: 2012-03-22
- Granted: 2013-06-18
- Earliest claimed: 2010-09-21
- Assignees: Techno Semichem Co., Ltd.
- Applicants: Jung Hun Lim; Dae Hyun Kim; Chang Jin Yoo; Seong Hwan Park
- Inventors: Jung Hun Lim; Dae Hyun Kim; Chang Jin Yoo; Seong Hwan Park
- Web page: https://patentgrep.com/patent/US8465662B2

## CPC

- H10P 50/283: {by chemical means}
- C09K 13/08: containing a fluorine compound
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE

## Abstract

Provided is an etching composition for electively removing silicon dioxide at a high etch rate, more particularly, a composition for wet etching of silicon dioxide, including 1 to 40 wt % of hydrogen fluoride (HF); 5 to 40 wt % of ammonium hydrogen fluoride (NH4HF2); and water, and further including a surfactant to improve selectivity of the silicon dioxide and a silicon nitride film. Since the composition for wet etching of silicon dioxide has the high etch selectivity of the silicon dioxide to the silicon nitride film, it is useful for selectively removing silicon dioxide.

## Claims

### Claim 1

A composition for wet etching of silicon dioxide, comprising:
10 to 30 wt % of hydrogen fluoride (HF), 30 to 40 wt % of ammonium hydrogen fluoride (NH4HF2), 0.001 to 1 wt % of ammonium polyoxyethylene (C1˜C20) alkyl sulfate and water, wherein a sum of a hydrogen fluoride content and an ammonium hydrogen fluoride content is 50 to 70 wt % based on the total weight of the composition.

### Claim 2 (depends on 1)

The composition for wet etching of silicon dioxide of claim 1, further comprising:
an etching accelerator selected from (C1˜C10) alcohol compounds of 0.001 to 5 wt % based on the total weight of the composition.

### Claim 3 (depends on 1)

The composition for wet etching of silicon dioxide of claim 1, further comprising:
an etching accelerator selected from the group consisting of methanol, ethanol, isopropyl alcohol, butanol, pentanol, hexanol, heptanol and a mixture thereof of 0.01 to 5 wt % based on the total weight of the composition.

### Claim 4 (depends on 1, 2)

A method for selectively removing silicon dioxide from a substrate, in which silicon dioxide is formed, by using the composition for wet etching of silicon dioxide according to claim 1, 2, or 3.