# US 8,465,615 B2 · Adhesive sheet and method for manufacturing the same, semiconductor device manufacturing method and semiconductor device

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- Number: US 8,465,615 B2
- Document ID: US8465615B2
- Status: Granted
- Kind: B2
- Application number: 13/310,531
- Filed: 2011-12-02
- Published: 2012-03-29
- Granted: 2013-06-18
- Earliest claimed: 2004-10-14
- Assignees: Hitachi Chemical Company, Ltd.
- Applicants: Maiko Tanaka; Michio Uruno; Takayuki Matsuzaki; Ryoji Furutani; Michio Mashino; Teiichi Inada
- Inventors: Maiko Tanaka; Michio Uruno; Takayuki Matsuzaki; Ryoji Furutani; Michio Mashino; Teiichi Inada
- Web page: https://patentgrep.com/patent/US8465615B2

## CPC

- H10W 72/30: Die-attach connectors
- C09J 7/20: characterised by their carriers
- H10P 72/0442: {Apparatus for placing on an insulating substrate, e.g. tape}
- H10P 72/74: {using temporarily an auxiliary support}
- H10P 72/7402: {Wafer tapes, e.g. grinding or dicing support tapes}
- H10W 90/00: Package configurations
- C09J 2203/326: for bonding electronic components such as wafers, chips or semiconductors
- C09J 2301/204: the adhesive coating being discontinuous
- H10P 72/7416: {used during dicing or grinding}
- H10P 72/7444: {using a peeling wedge, a knife or a bar}
- H10W 72/01331: {using blanket deposition}
- H10W 72/07173: {Means for moving chips, wafers or other parts, e.g. conveyor belts}
- H10W 72/073: {of die-attach connectors}
- H10W 72/07338: {hardening the adhesive by curing, e.g. thermosetting}
- H10W 72/354: {comprising polymers}
- H10W 72/387: {Flow barriers}
- H10W 72/5363: {the connected ends being wedge-shaped}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/732: {between stacked chips}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- Y10T 156/1082: Partial cutting bonded sandwich [e.g., grooving or incising]
- Y10T 156/1093: with covering of discrete laminae with additional lamina
- Y10T 428/1476: Release layer
- Y10T 428/24562: Interlaminar spaces
- Y10T 428/2839: with release or antistick coating
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- C09J: ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES (preparation of glue or gelatine C09H)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

An adhesive sheet comprising a release substrate 10, a substrate film 14, and a first tacky-adhesive layer 12 placed between the release substrate 10 and the substrate film 14, wherein an annular incision D is formed on the release substrate 10 from the surface of the first tacky-adhesive layer 12 side, the first tacky-adhesive layer 12 is laminated so as to cover the whole inner surface of the incision D in the release substrate 10, and the incision D has a depth d of less than the thickness of the release substrate 10 and 25 μm or less.

## Claims

### Claim 1

A method for producing a semiconductor wafer having a laminate, comprising:
peeling off a release substrate from an adhesive sheet comprising the release substrate, a substrate film, and a tacky-adhesive layer placed between the release substrate and the substrate film, to give the laminate including the substrate film and the tacky-adhesive layer; and
sticking the tacky-adhesive layer of the laminate to a semiconductor wafer,
wherein:
an annular incision has been formed in the release substrate of the adhesive sheet from the tacky-adhesive layer side of the release substrate,
the release substrate has a thickness of 30-50 μm,
the tacky-adhesive layer covers a whole inner surface of the incision in the release substrate,
the incision has a depth of more than zero, and less than 25 μm, and
a lamination of the laminate to the semiconductor wafer is continuously performed in an automatic step.

### Claim 2 (depends on 1)

The method of claim 1, wherein a value of (d/a) satisfies the following formula (I):
0<(d/a)≦0.7 (1),
wherein a (μm) is a thickness of the release substrate, and d (μm) is a depth of the incision.

### Claim 3 (depends on 1)

The method of claim 1, wherein the incision has a depth in the range of 5-15 μm.

### Claim 4

A method for producing a semiconductor wafer having a laminate, comprising:
peeling off the laminate including an adhesive layer, a tacky layer and a substrate film, in an adhesive sheet comprising a release substrate, the adhesive layer, the tacky layer, and the substrate film, which are laminated in order, from the release substrate, and sticking the laminate through the adhesive layer to a semiconductor wafer to give a semiconductor wafer having the laminate,
wherein:
the adhesive layer has a pre-determined plane shape and is partly formed on the release substrate,
an incision has been formed in the release substrate from a side bringing contact with the adhesive layer along the periphery of the plane shape of the adhesive layer;
the release substrate has a thickness of 30-50 μm,
the incision has a depth of more than zero, and less than 25 μm; and
a lamination of the laminate to the semiconductor wafer is continuously performed in an automatic step.

### Claim 5 (depends on 4)

The method of claim 4, wherein a value of (d/a) satisfies the following formula (I):
0<(d/a)≦0.7 (1),
wherein a (μm) is a thickness of the release substrate, and d (μm) is a depth of the incision.

### Claim 6

A method for sticking a laminate, comprising:
peeling off a release substrate from an adhesive sheet comprising the release substrate, a substrate film, and a tacky-adhesive layer placed between the release substrate and the substrate film, to give the laminate including the substrate film and the tacky-adhesive layer; and
sticking the tacky-adhesive layer of the laminate to an adherend,
wherein:
an annular incision has been formed in the release substrate from the tacky-adhesive layer side of the release substrate,
the release substrate has a thickness of 30-50 μm,
the tacky-adhesive layer covers a whole inner surface of the incision in the release substrate,
the incision has a depth of more than zero, and less than 25 μm, and
a lamination of the laminate to the adherend is continuously performed in an automatic step.

### Claim 7 (depends on 6)

The method of claim 6, wherein a value of (d/a) satisfies the following formula (I):
0<(d/a)≦0.07 (1),
wherein a (μm) is a thickness of the release substrate, and d (μm) is a depth of the incision.

### Claim 8

A method for sticking a laminate, comprising:
peeling off the laminate including an adhesive layer, a tacky layer and a substrate film, in an adhesive sheet comprising a release substrate, the adhesive layer, the tacky layer, and the substrate film, which are laminated in order, from the release substrate, and sticking the laminate through the adhesive layer to an adherend to give an adherend having the laminate,
wherein:
the adhesive layer has a pre-determined plane shape and is partly formed on the release substrate,
an incision has been formed in the release substrate from a side bringing contact with the adhesive layer along the periphery of the plane shape of the adhesive layer;
the release substrate has a thickness of 30-50 μm,
the incision has a depth of more than zero, and less than 25 μm; and
a lamination of the laminate to the adherend is continuously performed in an automatic step.

### Claim 9 (depends on 8)

The method of claim 8, wherein a value of (d/a) satisfies the following formula (I):
0<(d/a)≦0.07 (1),
wherein a (μm) is a thickness of the release substrate, and d (μm) is a depth of the incision.