# US 8,465,593 B2 · Substrate processing apparatus and gas supply method

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 8,465,593 B2
- Document ID: US8465593B2
- Status: Granted
- Kind: B2
- Application number: 12/014,537
- Filed: 2008-01-15
- Published: 2008-07-31
- Granted: 2013-06-18
- Earliest claimed: 2007-01-30
- Assignees: Tokyo Electron Limited
- Applicants: Daisuke Hayashi; Morihiro Takanashi
- Inventors: Daisuke Hayashi; Morihiro Takanashi
- Web page: https://patentgrep.com/patent/US8465593B2

## CPC

- H10P 50/283: {by chemical means}
- H10P 70/273: {the processing being a delineation of conductive layers, e.g. by RIE}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A substrate processing apparatus that can prevent formation of deposit in openings of a plurality of gas supply holes leading into a processing chamber. Each of the gas supply holes is configured to uniformly supply a processing gas, whose molecules are turned into clusters, into the processing chamber and to prevent liquefaction of processing gas when the processing gas is supplied into the processing chamber.

## Claims

### Claim 1

A substrate processing apparatus comprising: a hydrogen fluoride gas supply unit which provides hydrogen fluoride gas at a predetermined temperature as a processing gas into a processing chamber; a pressure-reducing and heating unit connected to the hydrogen fluoride gas supply unit, configured to decrease a pressure of the hydrogen fluoride gas, and configured to heat the hydrogen fluoride gas after adiabatic expansion to maintain the hydrogen fluoride gas at the predetermined temperature; and a hydrogen fluoride gas supply pipe connected between the pressure-reducing and heating unit and the processing chamber; wherein said hydrogen fluoride gas supply unit comprises a plurality of gas supply holes for introduction of the hydrogen fluoride gas into the processing chamber, each of said gas supply holes is configured to uniformly supply the hydrogen fluoride gas into the processing chamber and prevent liquefaction of the hydrogen fluoride gas when supplied into the processing chamber, said pressure-reducing and heating unit is disposed on-a upstream from the hydrogen fluoride gas supply pipe through which the hydrogen fluoride gas passes before supplying the processing gas into the processing chamber and performs both a reduction of a pressure of the hydrogen fluoride gas and a heating of the hydrogen fluoride gas such that clusters of molecules of the hydrogen fluoride gas are dissociated before supplying the hydrogen fluoride gas into the processing chamber, wherein said pressure-reducing and heating unit reduces the pressure of the hydrogen fluoride gas from more than atmospheric pressure to less than atmospheric pressure.

### Claim 2 (depends on 1)

A substrate processing apparatus according to claim 1, wherein in a case where a flow rate of the processing gas supplied into the processing chamber by said hydrogen fluoride gas supply unit is 2970 to 3030 sccm, said gas supply holes are formed to have a diameter of 1 mm or greater.

### Claim 3 (depends on 2)

A substrate processing apparatus according to claim 2, wherein a pressure in the processing chamber is 4000 Pa (30 Ton) or higher, and a temperature on walls of said gas supply holes is 80 ° C. or higher.

### Claim 4 (depends on 1)

A substrate processing apparatus according to claim 1, wherein each of said gas supply holes has an opening leading into the processing chamber and broadening toward the end.

### Claim 5 (depends on 1)

A substrate processing apparatus according to claim 1, wherein said pressure-reducing and heating unit reduces the pressure of the hydrogen fluoride gas from 1000 Ton to 400 Torr.

### Claim 6 (depends on 1)

A substrate processing apparatus according to claim 1, wherein the hydrogen fluoride gas the pressure of which has been reduced is supplied into the processing chamber from a high-pressure area higher in pressure than the pressure in the processing chamber.