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US 8,450,704 B2Granted
Phonon-enhanced crystal growth and lattice healing
AssigneeMassachusetts Institute of Technology
InventorsAnthony Buonassisi, Mariana Bertoni, Bonna Newman
Life of this patent
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Abstract
A system for modifying dislocation distributions in semiconductor materials is provided. The system includes one or more vibrational sources for producing at least one excitation of vibrational mode having phonon frequencies so as to enhance dislocation motion through a crystal lattice.
Claims18
A system for modifying dislocation distributions in semiconductor materials comprising:
- a crystal lattice;
- at least two vibrational sources for producing a superposition of a plurality of excitations of a vibrational mode from opposite directions having phonon frequencies using sub-bandgap light that is absorbed preferentially at a dislocation so as to enhance dislocation motion through said crystal lattice, sound waves or pressure waves are created by pulsed contact with said semiconductor materials.
A method of modifying dislocation distributions in semiconductor materials comprising:
- providing at least two vibrational sources;
- producing a superposition of a plurality of excitations of a vibrational mode from opposite directions using the said at least two vibrational sources, at least one excitation of said vibrational mode having phonon frequencies using sub-bandgap light that is absorbed preferentially at a dislocation so as to enhance dislocation motion through a crystal lattice, sound waves or pressure waves are created by pulsed contact with said semiconductor materials.
Dependencies are inferred from the claim text.