Method of removing back metal from an etched semiconductor scribe street
AssigneeMicro Processing Technology, Inc.
InventorPaul C. Lindsey, Jr.
Life of this patent
Estimating the term…
Abstract
A method of dividing a semiconductor wafer having a metal layer and a semiconductor material layer including the step of cutting the semiconductor material layer along scribe streets without cutting the metal layer, turning over the wafer, and cutting the metal layer along the scribe streets.
Claims17
A method of dividing a semiconductor wafer having a metal layer attached to a semiconductor material layer and intersecting scribe streets into separate individual devices, said method comprising the steps of:
- mounting the wafer on a first support with the metal layer adhesively attached to said first support whereby said first support supports said wafer;
- while said metal layer is adhesively attached to said first support, removing substantially all the semiconductor material in the scribe streets to form individual semiconductor material dies, each incorporating a device, without removing the metal layer from the scribe streets;
- adhesively attaching the semiconductor material dies of said semiconductor material layer to a second support;
- while employing said second support to support said wafer, releasing said first support from adhesive attachment to said metal layer and removing said first support from said metal layer to expose the metal layer;
- and
- while continuing to employ said second support to support said wafer, cutting said metal layer along said scribe streets.
A method of dividing a semiconductor wafer having a metal layer attached to a semiconductor material layer and intersecting scribe streets into separate individual devices, said method comprising the steps of:
- mounting the wafer on a first support with the metal layer adhesively attached to said first support whereby said first support supports said wafer;
- while said metal layer is adhesively attached to said first support, removing all or a substantial portion of semiconductor material in the scribe streets to form individual semiconductor material dies, each incorporating a device, without removing the metal layer from the scribe streets;
- adhesively attaching the semiconductor material dies of said semiconductor material layer to a second support;
- while employing said second support to support said wafer, releasing said first support from adhesive attachment to said metal layer and removing said first support from said metal layer to expose the metal layer;
- and
- while continuing to employ said second support to support said wafer, cutting said metal layer along said scribe streets, the amount of any semiconductor material remaining in said scribe streets after removal of a substantial portion thereof being insufficient to impede cutting of said metal layer.
A method of dividing a semiconductor wafer having a metal layer attached to a semiconductor material layer and intersecting scribe streets into separate individual devices, said method comprising the steps of:
- while said metal layer is attached to a first support, removing all or substantially all of the semiconductor material in the scribe streets to form individual semiconductor material dies, each incorporating a device, without removing the metal layer from the scribe streets;
- turning over said wafer;
- and
- while employing a second support to support said overturned wafer, cutting said metal layer along said scribe streets.
Dependencies are inferred from the claim text.