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US 8,441,124 B2Granted
Cu pillar bump with non-metal sidewall protection structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Wen Wu, Cheng-Chung Lin, Chien Ling Hwang, Chung-Shi Liu
Life of this patent
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Abstract
A sidewall protection structure is provided for covering at least a portion of a sidewall surface of a bump structure, in which a protection structure on the sidewalls of a Cu pillar and a surface region of an under-bump-metallurgy (UBM) layer is formed of at least one non-metal material layers, for example a dielectric material layer, a polymer material layer, or combinations thereof.
Claims20
An integrated circuit device, comprising:
- a semiconductor substrate;
- a conductive pillar formed over the semiconductor substrate, and having a sidewall surface and a top surface;
- a under-bump-metallurgy (UBM) layer formed between the semiconductor substrate and the conductive pillar, and having a surface region adjacent to and extending from the sidewall surface of the conductive pillar;
- and
- a protection structure formed on the sidewall surface of the conductive pillar and the surface region of the UBM layer;
- wherein the protection structure is formed of a non-metal material, and the conductive pillar is formed of a copper-containing layer.
3 more elements
A packaging assembly, comprising:
- a first substrate;
- a bump structure formed on the first substrate,
- wherein the bump structure comprises an under-bump-metallurgy (UBM) layer formed on the first substrate, and a copper pillar formed on the UBM layer,
- wherein the UBM layer has a surface region adjacent to and extending from a sidewall surface of the copper pillar;
- a non-metal protection structure covering the sidewall surface of the copper pillar and the surface region of the UBM layer;
- a second substrate;
- and
- a joint solder layer formed between the second substrate and the bump structure.
5 more elements
Dependencies are inferred from the claim text.