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US 8,441,006 B2Granted
Cyclic carbosilane dielectric films
AssigneeIntel Corporation
InventorsDavid J. Michalak, James M. Blackwell, James S. Clarke
Life of this patent
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Abstract
Embodiments of the invention provide dielectric films and low-k dielectric films and methods for making dielectric and low-k dielectric films. Dielectric films are made from carbosilane-containing precursors. In embodiments of the invention, dielectric film precursors comprise attached porogen molecules. In further embodiments, dielectric films have nanometer-dimensioned pores.
Claims17
A device comprising,
- a substrate,
- a dielectric film disposed on the substrate, wherein the dielectric film is comprised of crosslinked cyclic carbosilanes, wherein a cyclic carbosilane has a ring structure comprising carbon and silicon, wherein the dielectric film is hydrophobic, wherein the dielectric hydrophobic film takes up less than 5% by volume of water in a saturated H2O atmosphere at room temperature, and wherein the dielectric film comprises between 45 and 60 atomic percent C, between 25 and 35 atomic percent Si, and between 10 and 20 atomic percent O.
A device comprising,
- a substrate,
- a dielectric film disposed on the substrate, wherein the dielectric film is comprised of crosslinked cyclic carbosilanes, wherein a cyclic carbosilane has a ring structure comprising carbon and silicon, wherein the dielectric film is hydrophobic, wherein the dielectric hydrophobic film takes up less than 5% by volume of water in a saturated H2O atmosphere at room temperature, wherein the dielectric film is chemically stable, and wherein the dielectric film is porous and the porosity is between 5% and 60%.
Dependencies are inferred from the claim text.