Method for manufacturing porous structure and method for forming pattern
AssigneeKabushiki Kaisha Toshiba
InventorsKoji Asakawa, Toshiro Hiraoka, Yoshihiro Akasaka, Yasuyuki Hotta
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Abstract
A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio between N/(Nc-No) values of monomer units constituting respective polymer chains is 1.4 or more, where N represents total number of atoms in the monomer unit, Nc represents the number of carbon atoms in the monomer unit, No represents the number of oxygen atoms in the monomer unit.
Claims4
A method for forming a pattern comprising:
- forming a film made of a pattern forming material comprising a copolymer having a polystyrene derivative and a polymethacrylate derivative containing silsesquioxane on a substrate;
- forming a microphase-separated structure in the film;
- etching the substrate by using a phase of the poly methacrylate derivative containing silsesquioxane, thereby transferring the pattern of the microphase-separated structure to the substrate.
Dependencies are inferred from the claim text.