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US 8,431,516 B2Granted
Composition and method for cleaning semiconductor substrates comprising an alkyl diphosphonic acid
OwnerWai Mun Leeinventor
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Abstract
The compositions and methods for the removal of residues and contaminants from metal or dielectric surfaces comprises at least one alkyl diphosphonic acid, at least one second acidic substance at a mole ratio of about 1:1 to about 10:1 in water, and pH is adjusted to from about 6 to about 10 with a metal ion free base, and a surfactant. Particularly, a composition and method of cleaning residues after chemical mechanical polishing of a copper or aluminum surface of the semiconductor substrates.
Claims19
A cleaning solution comprises
- a. greater than 6% by weight of an alkyl diphosphonic acid of the basic structure:
- wherein R1 and R2 are either the same or different and select from the group consisting of hydrogen (H), hydroxide (OH), chloride (Cl), alkyl or aryl having between 1 to about 8 carbon atoms and alkyl or aryl amine;
- b. sulfamic acid;
- c. a buffering amount of one or more metal ion free basic compounds selected from the group consisting of hydroxylamine freebase, a hydroxylamine derivative, tetraalkylammonium hydroxide, TMAH pentahydrate, BTMAH (benzyltetramethylammonium hydroxide), TBAH, choline, THEMAH (Tris(2-hydroxyethyl)methylammonium hydroxide)), monoethanolamine, 2-(2-hydroxylethylamino)ethanol, 2-(2-aminoethoxy)ethanol, N,N,N-tris(2-hydroxyethyl)-ammonia, isopropanolamine, 3-amino-1-propanol, 2-amino-1-propanol, 2-(N-methylamino)ethanol, 2-(2-aminoethylamino)ethanol, tris(hydroxymethyl)aminoethane, or mixtures thereof;
- d. from 0% by weight and up to 5% by weight of a surfactant;
- and
- e. water.
4 more elements
A method of cleaning semiconductor substrates comprising the steps of:
- i. providing a substrate having a surface comprising copper-containing conductor and a low-k dielectric material and one or more of etching residue, planarization residue, and copper oxide disposed on the surface, which generated from a damascene or dual damascene manufacturing processes or thereof;
- ii. contacting the surface of the substrate with an effective amount of solution comprising:
- a. greater than 6% by weight of an alkyl diphosphonic acid of the basic structure:
- wherein R1 and R2 are either the same or different and select from the group consisting of hydrogen (H), hydroxide (OH), chloride (Cl), alkyl or aryl having between 1 to about 8 carbon atoms and alkyl or aryl amine;
- b. sulfamic acid;
- c. a buffering amount of one or more basic compounds to adjust pH from about 6 to about 10;
- d. from 0% by weight and up to 5% by weight of a surfactant;
- and
- e. water
- for a time and at a temperature sufficient to remove the resist, residues, and/or copper oxide.
7 more elements
Dependencies are inferred from the claim text.