Method for resizing pattern to be written by lithography technique, and charged particle beam writing method

A method for resizing a pattern to be written by using lithography technique comprising:

• calculating, with a resizing data generation apparatus, a first dimension correction amount of a pattern for correcting a dimension error caused by a loading effect, for each small region made by virtually dividing a writing region of a target workpiece into meshes of a predetermined size, based on an area density of the each small region;
• calculating, with said resizing data generation apparatus, a second dimension correction amount in accordance with an adjacent pattern to be written around a pattern to be written in the each small region, said second dimension correction amount being calculated by using a result of an experiment using groups of reference patterns in which a distance between the groups is remote enough to disregard an influence of the loading effect;
• correcting, with said resizing data generation apparatus, the first dimension correction amount by using the second dimension correction amount;
• and
• resizing, with said resizing data generation apparatus, a line width dimension of the pattern by using a corrected first dimension correction amount, and outputting a result of the resizing,
• wherein the second dimension correction amount is calculated by using an area of the adjacent pattern and a distance between gravity centers of the pattern to be written and the adjacent pattern.