Data generation method for semiconductor device, and electron beam exposure system

An electron beam exposure system comprising:

• a data generation device that includes:
• a correcting unit that corrects a dose of electron beam exposure using design data of a semiconductor device;
• an electron beam exposure data generation unit that generates electron beam exposure data, used for electron beam exposure, from the design data of a semiconductor device and a photoexposure data generation unit that generates photoexposure data, used for photoexposure, from the design data of a semiconductor device;
• a photoexposure pattern storage unit that stores the shape of a photoexposure pattern formed on a substrate through photoexposure on a basis of the photoexposure data;
• an electron beam exposure pattern storage unit that stores the shape of an electron beam exposure pattern formed on the substrate through electron beam exposure on the basis of the electron beam exposure data;
• a differential extraction unit that extracts differential information that indicates a difference between the shape of the photoexposure pattern and the shape of the electron beam exposure pattern;
• a determination unit that determines whether the size of the difference between the shape of the electron beam exposure pattern and a shape of the photoexposure pattern falls within a predetermined reference value;
• an updating unit that acquires shape changed exposure data n accordance with the difference information between the shape of the photoexposure pattern and an exchanged shape of an electron beam exposure pattern that is changed in accordance with the photoexposure pattern while the dose of electron beam exposure is fixed, and updating by overwriting the electron beam exposure data with the shape changed exposure data if the size of the differential portion does not fall within the reference value;
• and
• a control unit that repeatedly starts the differential extraction unit, the determination unit, and the updating unit when the size of the difference is outside the predetermined reference value;
• and
• an exposure apparatus that creates a pattern on a semiconductor substrate in accordance with the electron beam exposure data generated by the data generation device.