Thick oxide film by single coating
AssigneeAmerican Superconductor Corporation
InventorsSrivatsan Sathyamurthy, Martin W. Rupich
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Abstract
An article including a substrate and a layer of a homogeneous metal-oxyfluoride intermediate film disposed on the substrate, the intermediate film containing a rare earth metal, an alkaline earth metal, and a transition metal. The intermediate film has a defect density less than 20 percent and, upon thermal treatment, is capable of converting to a homogeneous rare earth metal-alkaline earth metal-transition metal-oxide superconductor film with a stoichiometric thickness greater than 1 μm and up to 5 μm. Also disclosed is another article including a substrate and the homogeneous superconductor film with a stoichiometric thickness greater than 1 μm and up to 5 μm. Further, methods of making these two articles are described.
Claims14
An article comprising:
- a substrate, and
- a layer of a homogeneous metal-oxyfluoride intermediate film disposed on the substrate, the intermediate film containing a rare earth metal, an alkaline earth metal, and a transition metal,
- wherein the intermediate film has a defect density less than 20 percent and, upon thermal treatment, is capable of converting to a homogeneous rare earth metal-alkaline earth metal-transition metal-oxide superconductor film with a stoichiometric thickness greater than 1 μm and up to 5 μm.
An article comprising:
- a substrate, and
- a homogeneous film disposed on the substrate,
- wherein the film, formed of a rare earth metal-alkaline earth metal-transition metal-oxide superconductor, has a laminar grain structure, a stoichiometric thickness greater than 1 μm and up to 5 μm, a porosity of 5%-20%, and a critical current density of 1 to 5 MA/cm2.
Dependencies are inferred from the claim text.