Optical device on inverted, substrateless chip

A system, comprising a hybrid integrated module, wherein the hybrid integrated module includes:

• a semiconductor die having a top surface;
• an adhesive mechanically coupled to the top surface of the semiconductor die;
• and
• an integrated device, wherein the integrated device includes:
• a semiconductor layer having a top surface, a bottom surface and a thickness, wherein the top surface of the semiconductor layer is mechanically coupled to the adhesive, and wherein the semiconductor layer includes an optical waveguide configured to convey an optical signal having an optical mode;
• an oxide layer having a top surface, a bottom surface and a thickness, wherein the top surface of the oxide layer is disposed on the bottom surface of the semiconductor layer;
• and
• an optical device disposed on the bottom surface of the oxide layer, wherein the thickness of the semiconductor layer and the thickness of the oxide layer are defined so that the optical signal is evanescently coupled between the optical waveguide and the optical device;
• a processor incorporated into one of the semiconductor die and the integrated device;
• and
• a memory incorporated into one of the semiconductor die and the integrated device.

A method for fabricating a hybrid integrated module, the method comprising:

• applying an adhesive to a top surface of a semiconductor die;
• and
• placing an integrated device on the adhesive, wherein the integrated device includes:
• a semiconductor layer having a top surface, a bottom surface and a thickness, wherein the top surface of the semiconductor layer is mechanically coupled to the adhesive;
• and wherein the semiconductor layer includes an optical waveguide configured to convey an optical signal;
• an oxide layer having a top surface, a bottom surface and a thickness, wherein the top surface of the oxide layer is disposed on the bottom surface of the semiconductor layer;
• and
• an optical device disposed on the bottom surface of the oxide layer, wherein the thickness of the semiconductor layer and the thickness of the oxide layer are defined so that the optical signal is evanescently coupled between the optical waveguide and the optical device.