Surface-emitting semiconductor laser
AssigneeOSRAM Opto Semiconductors GmbH
InventorsHans Lindberg, Stefan Illek
Life of this patent
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Abstract
A surface-emitting semiconductor laser is described, with a semiconductor chip (1), which has a substrate (2), a DBR-mirror (3) applied to the substrate (2) and an epitaxial layer sequence (4) applied to the DBR mirror (3), said layer sequence comprising a radiation-emitting active layer (5), and with an external resonator mirror (9) arranged outside the semiconductor chip (1). The DBR mirror (3) and the substrate (2) are partially transmissive for the radiation (6) emitted by the active layer (5) and the back (14) of the substrate (2) remote from the active layer (5) is reflective to the emitted radiation (6).
Claims14
A surface-emitting semiconductor laser, comprising:
- a semiconductor chip including a growth substrate comprising one of GaAs, InP, SiC and sapphire, a DBR mirror applied to the growth substrate and an epitaxial layer sequence applied to the DBR mirror, the epitaxial layer sequence comprising a radiation-emitting active layer;
- and
- an external resonator mirror arranged outside the semiconductor chip;
- wherein the DBR mirror and the growth substrate are partially transmissive for radiation emitted by the radiation-emitting active layer and a back of the growth substrate remote from the DBR mirror is reflective to the emitted radiation, wherein the back of the growth substrate is provided with a reflection-increasing layer.
A surface-emitting semiconductor laser comprising:
- a semiconductor chip including a growth substrate comprising one of GaAs, InP, SiC and sapphire, a DBR mirror applied to the growth substrate and an epitaxial layer sequence applied to the DBR mirror, the epitaxial layer sequence comprising a radiation-emitting active layer;
- and
- an external resonator mirror arranged outside the semiconductor chip;
- wherein the DBR mirror and the growth substrate are partially transmissive for radiation emitted by the radiation-emitting active layer and a back of the substrate remote from the DBR mirror is reflective to the emitted radiation;
- wherein the back of the growth substrate is provided with a reflection-increasing layer;
- and
- wherein a cavity formed by the DBR mirror and a reflective back of the growth substrate is antiresonant at a wavelength of the radiation emitted by the radiation-emitting active layer.
Dependencies are inferred from the claim text.