Method and apparatus for performing multi-block access operation in nonvolatile memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsChan Ho Kim, Dong Kyu Youn, Sang Won Hwang, Jin Yub Lee
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Abstract
A nonvolatile memory device comprises a first mat, a second mat, a third mat, a first address decoder, a second address decoder, and a third address decoder. The first mat comprises first memory blocks, the second mat comprises second memory blocks, and the third mat comprises third memory blocks. The first address decoder selects one of the first memory blocks according to a first even address, the second address decoder selects one of the second memory blocks according to a second even address or a first odd address, and the third address decoder selects one of the third memory blocks according to a second odd address.
Claims20
A nonvolatile memory device, comprising:
- a first mat comprising first memory blocks each having an even address;
- a second mat comprising second memory blocks each having an even address or an odd address;
- a third mat comprising third memory blocks each having an odd address;
- a first address decoder that selects one of the first memory blocks according to a first even address;
- a second address decoder that selects one of the second memory blocks according to a second even address or a first odd address;
- and
- a third address decoder that selects one of the third memory blocks according to a second odd address.
A method of performing a multi-block access operation in a nonvolatile memory device comprising M mats, where M is an odd integer greater than or equal to three, the method comprising:
- receiving an N-block access command and at least one address, where N is an integer between two and M;
- selecting N memory blocks from N mats according to the at least one address;
- and
- performing an N-block access operation on the selected memory blocks.
A memory system comprising:
- a nonvolatile memory device comprising:
- M mats each comprising a plurality of memory blocks, where M is an odd integer greater than or equal to three;
- and
- M address decoders each corresponding to a different one of the M mats and configured to select memory blocks from the corresponding mat according to an input address;
- and
- a memory controller configured to control the nonvolatile memory device to perform an N-block access operation in which at least two memory blocks from different mats are simultaneously selected according to one input address, wherein N is an integer between two and M.
Dependencies are inferred from the claim text.