Systems, memories, and methods for repair in open digit memory architectures

A method of repairing a memory, comprising:

• activating a core row in a core array of memory cells operably coupled to an open digit sense circuit to generate a replaceable IO signal;
• activating a replacement row in a replacement array of memory cells operably coupled to a folded digit sense circuit;
• sensing a pair of memory cells in the replacement array of memory cells with the folded digit sense circuit to generate a replacement IO signal;
• and
• selecting the replacement IO signal rather than the replaceable IO signal, wherein when the core array with the activated core row is adjacent to the replacement array, the activating the replacement row further comprises activating the replacement row in a replacement array that is not adjacent to the core array with the activated row.

A memory, comprising:

• a group of memory cells comprising:
• a first digit line operably coupling a first memory cell to a first open sense circuit;
• a second digit line operably coupling a second memory cell to a second open sense circuit;
• a third digit line operably coupling a third memory cell to a folded sense circuit;
• and
• a fourth digit line operably coupling a fourth memory cell to the folded sense circuit, wherein, the third digit line and the fourth digit line are adjacent and in the center of the group of four adjacent digit lines, and during a memory cycle:
• the folded sense circuit is configured to generate a replacement IO signal from a digit and a complement digit sensed from the third digit line and the fourth digit line;
• the first open sense circuit is configured to sense the first digit line;
• and
• the second open sense circuit is configured to sense the second digit line.

A method of repairing a memory, comprising:

• activating a core row in a core array of memory cells operably coupled to an open digit sense circuit to generate a replaceable IO signal;
• activating a replacement row in a replacement array of memory cells operably coupled to a folded digit sense circuit;
• sensing a pair of memory cells in the replacement array of memory cells with the folded digit sense circuit to generate a replacement IO signal;
• selecting the replacement IO signal rather than the replaceable IO signal;
• activating an additional row in an additional core array of memory cells to generate an additional replaceable IO signal;
• activating an additional replacement row in an additional replacement array of memory cells;
• sensing an additional redundant memory to generate an additional replacement IO;
• and
• selecting the additional replacement IO rather than the additional replaceable IO.

A method of repairing a memory, comprising:

• activating a core row in a core array of memory cells operably coupled to an open digit sense circuit to generate a replaceable IO signal;
• activating a replacement row in a replacement array of memory cells operably coupled to a folded digit sense circuit;
• sensing a pair of memory cells in the replacement array of memory cells with the folded digit sense circuit to generate a replacement IO signal;
• and
• selecting the replacement IO signal rather than the replaceable IO signal,
• wherein when the core array with the activated core row is one array away from the replacement array, the activating the replacement row further comprises activating the replacement row in a replacement array that is more than one array away from the core array with the activated row.