Non-volatile memory devices, operating methods thereof and memory systems including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSunil Shim, Jaehoon Jang, Donghyuk Chae, Youngho Lim, Hansoo Kim, Jaehun Jeong
Life of this patent
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Abstract
Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.
Claims19
A nonvolatile memory device which includes a plurality of memory cells that are sequentially arranged in a vertical direction to a substrate, comprising:
- a memory cell array including a plurality of word lines connected to the plurality of memory cells;
- and
- a word line driver configured to apply a plurality of word line voltages corresponding to the plurality of word lines, a magnitude of each of the plurality of word line voltages based on a location of a corresponding one of the plurality of word lines.
A method for operating a nonvolatile memory device which includes a plurality of memory cells that are sequentially arranged in a vertical direction to a substrate, comprising:
- determining a magnitude of a word line voltage of a word line based on a location of the word line;
- and
- setting the word line voltage on the word line.
A memory system comprising a nonvolatile memory device which includes a plurality of memory cells that are sequentially arranged in a vertical direction to a substrate, comprising:
- the nonvolatile memory device;
- and
- a controller configured to control the nonvolatile memory device,
- wherein the nonvolatile memory device includes
- a memory cell array including the plurality of memory cells, and
- a word line driver configured to apply a select voltage to a selected word line of a plurality of word lines connected to the plurality of memory cells, and to apply an unselect voltage to an unselected word line of the plurality of word lines, a magnitude of the select voltage determined according to a location of the selected word line.
Dependencies are inferred from the claim text.