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US 8,427,873 B2Granted
Read operation for non-volatile storage with compensation for coupling
AssigneeSanDisk Technologies LLC
InventorNima Mokhlesi
Life of this patent
Estimating the term…
Abstract
Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To account for this coupling, the read process for a particular memory cell will provide compensation to an adjacent memory cell in order to reduce the coupling effect that the adjacent memory cell has on the particular memory cell.
Claims28
A method for reading data from non-volatile storage, comprising:
- reading data from a selected non-volatile storage element;
- determining whether there is an error in the data;
- determining whether the error is correctable;
- correcting the errors in the data and reporting the data if the error is correctable;
- and
- recovering the data and reporting the data if the error is not correctable, the recovering the data includes:
- sensing a condition of a neighbor of the selected non-volatile storage element,
- applying a read voltage to the selected non-volatile storage element during a read process for the selected non-volatile storage element after sensing the condition of the neighbor,
- while applying the read voltage to the selected non-volatile storage element during the read process, using a particular voltage for the neighbor based on the condition of the neighbor, and
- sensing a condition of the selected non-volatile storage element during the read process.
7 more elements
A non-volatile storage system, comprising:
- a plurality of non-volatile storage elements including selected non-volatile storage elements and neighbor non-volatile storage elements, each neighbor non-volatile storage element is adjacent to a respective selected non-volatile storage element;
- one or more managing circuits in communication with the plurality of non-volatile storage elements, the one or more managing circuits read data from the selected non-volatile storage elements and determine whether there are errors in the data read, the one or more managing circuits determine whether the errors are correctable and correct the errors in the data if the errors are correctable;
- and
- the one or more managing circuits recover the data if the errors are not correctable by sensing conditions of the neighbors, applying one or more read voltages to the selected non-volatile storage elements during a read process for the selected non-volatile storage elements after sensing the conditions of the neighbors, using one or more particular voltages for the neighbors based on the conditions of the neighbors while applying one or more read voltages to the selected non-volatile storage elements during the read process and sensing conditions of the selected non-volatile storage elements during the read process.
1 more element
A method for reading data from non-volatile storage, comprising:
- reading data from a selected non-volatile storage element;
- determining whether there is an error in the data read;
- and
- recovering the data if there is error, the recovering the data includes applying a read compare voltage to the selected non-volatile storage element during a read process for the selected non-volatile storage element, using a first pass voltage for a first set of unselected selected non-volatile storage elements during the read process, using a second pass voltage during the read process for a neighbor of the selected non-volatile storage element such that the second pass voltage is based on a current condition of the neighbor and sensing a condition of the selected non-volatile storage element during the read process, the second pass voltage is different than the first pass voltage.
1 more element
A non-volatile storage system, comprising:
- a plurality of non-volatile storage elements including a selected non-volatile storage element and a neighbor non-volatile storage elements, the neighbor non-volatile storage element is adjacent to the selected non-volatile storage element;
- and
- one or more managing circuits in communication with the plurality of non-volatile storage elements, the one or more managing circuits read data from the selected non-volatile storage element and determine whether there is an error in the data read;
- the one or more managing circuits recover the data if there is an error in the data by applying a read compare voltage to the selected non-volatile storage element during a read process for the selected non-volatile storage element, using a first pass voltage for a first set of unselected selected non-volatile storage elements during the read process, applying a second pass voltage during the read process for the neighbor such that the second pass voltage is based on a current condition of the neighbor and sensing a condition of the selected non-volatile storage element during the read process, the second pass voltage is different than the first pass voltage.
1 more element
Dependencies are inferred from the claim text.