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US 8,427,871 B2Granted
Nonvolatile memory device, memory system incorporating same, and method of operating same
AssigneeSamsung Electronics Co., Ltd.
InventorsJinman Han, Sangyong Yoon
Life of this patent
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Abstract
A nonvolatile memory device performs a program operation comprising applying a program pulse to selected memory cells, detecting a number of fail bits among the selected memory cells, the fail bits comprising failed program bits and disturbed inhibit bits, and determining a program completion status of the program operation based on the number of detected fail bits.
Claims20
A method of performing a program operation in a nonvolatile memory device, comprising:
- (a) applying a program pulse to selected memory cells;
- (b) detecting a number of fail bits among the selected memory cells, the fail bits comprising failed program bits and disturbed inhibit bits;
- and
- (c) determining a program completion status of the program operation based on the number of detected fail bits,
- wherein the disturbed inhibit bits include at least one disturbed inhibit bit among erase bits or at least one disturbed inhibit bit among passed program bits.
2 more elements
A nonvolatile memory device comprising:
- a page buffer circuit configured to store program bits and inhibit bits to be programmed in selected memory cells in a program operation, and further configured to perform a program verify operation to detect failed program bits and disturbed inhibit bits from the selected memory cells;
- and
- a control logic configured to determine a completion state of the program operation based on the number of detected failed program bits and disturbed inhibit bits,
- wherein the disturbed inhibit bits include at least one disturbed inhibit bit among erase bits or at least one disturbed inhibit bit among passed program bits.
1 more element
A memory system comprising:
- a nonvolatile memory device;
- and
- a memory controller controlling the nonvolatile memory device to perform a program operation comprising applying a program pulse to selected memory cells, detecting a number of failed program bits and disturbed inhibit bits, and determining a program completion status of the program operation based on the detected number of failed program bits and disturbed inhibit bits,
- wherein the disturbed inhibit bits include at least one disturbed inhibit bit among erase bits or at least one disturbed inhibit bit among passed program bits.
1 more element
Dependencies are inferred from the claim text.