Semiconductor storage device

A semiconductor storage device comprising:

• a plurality of word lines;
• a plurality of bit lines and a plurality of source lines extending in a direction orthogonal to the plurality of word lines, respectively;
• and
• a plurality of memory cells arranged at predetermined intersection points of the plurality of word lines, the plurality of bit lines, and the plurality of source lines,
• the memory cell being formed of a select transistor and a tunnel magnetoresistive element having different resistance values according to stored information,
• the tunnel magnetoresistive element having a tunnel barrier film with a fixed layer and a free layer formed of magnetic materials arranged and both sides the tunnel barrier film,
• the fixed layer having a direction of magnetization fixed to a predetermined direction, and the free layer having a direction of magnetization either parallel or anti-parallel to the direction of electron spin of the fixed layer,
• the tunnel magnetoresistive element having different resistance values depending on whether the direction of magnetization of the free layer is parallel or anti-parallel to the direction of electron spin of the fixed layer,
• the direction of magnetization of the free layer being changed by a direction of a current flowing in the tunnel magnetoresistive element,
• a gate electrode of the select transistor being electrically connected to the word line,
• one of the source and drain regions of the select transistor being electrically connected to one of the other terminals of the tunnel magnetoresistive element,
• the other terminal of the tunnel magnetoresistive element being electrically connected to one of the bit line or the source line, and
• the other of the source and drain regions of the select transistor being electrically connected to the other of the bit line or the source line,
• wherein, to write information in the memory cell, a current in a direction opposite to a current necessary for writing is supplied to the memory cell, and then, a circuit for supplying the current necessary for writing is provided.