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US 8,427,862 B2Granted
Reading a phase change memory
AssigneeOvonyx, Inc.
InventorWard D. Parkinson
Life of this patent
Estimating the term…
Abstract
A phase change memory cell may be read by driving a current through the cell higher than its threshold current. A voltage derived from the selected column may be utilized to read a selected bit of a phase change memory. The read window or margin may be improved in some embodiments. A refresh cycle may be included at periodic intervals.
Claims10
A method comprising:
- maintaining a selected row line at a voltage above ground when reading a phase change memory cell on said selected row line, and
- maintaining unselected row lines at a higher voltage than said selected row line when reading the selected row line.
A method comprising:
- forming a phase change memory that maintains a selected row line at a voltage above ground when reading a bit on said selected row line, and that maintains unselected row lines at a higher voltage than said selected row line when reading the selected row line.
A phase change memory comprising:
- a plurality of chalcogenide cells;
- and
- a circuit to maintain a selected row line at a voltage above ground when reading a bit on said selected row line, and to maintain unselected row lines at a higher voltage than said selected row line when reading the selected row line.
Dependencies are inferred from the claim text.