Memory component, memory device, and method of operating memory device

A memory device comprising:

• a plurality of memory components, each including a first electrode, a memory layer, and a second electrode which are provided in that order;
• and
• a pulse application means for selectively applying a voltage or current pulse to the plurality of memory components,
• wherein the memory layer includes
• an ion source layer containing aluminum (Al) together with at least one chalcogen element selected from the group consisting of tellurium (Te), sulfur (S), and selenium (Se), and
• a resistance variable layer provided between the ion source layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.

A method of operating a memory device including a plurality of memory components, each including a first electrode, a memory layer, and a second electrode which are provided in that order, and a pulse application means for selectively applying a voltage or current pulse to the plurality of memory components, the memory layer including an ion source layer containing aluminum (Al) and a metal element other than aluminum (Al) together with at least one chalcogen element selected from the group consisting of tellurium (Te), sulfur (S), and selenium (Se), and a resistance variable layer provided between the ion source layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide, the method comprising the steps of:

• applying a voltage between the first electrode and the second electrode, so that in the ion source layer, aluminum (Al) ions and ions of a metal element contained in the ion source layer are moved towards the first electrode side, and in the resistance variable layer, a conduction path is formed by a reduction reaction of an aluminum oxide or the ions of the metal element, thus realizing a low-resistance state;
• and
• applying a reverse polarity voltage between the first electrode and the second electrode, so that in the ion source layer, the aluminum (Al) ions and the ions of the metal element contained in the ion source layer are moved towards the second electrode side, and in the resistance variable layer, the aluminum (Al) ions form an aluminum oxide through an oxidation reaction, thus realizing a high-resistance state, or the reduced metal element is ionized to move towards the ion source layer, thus destroying the conduction path and realizing a high-resistance state.

A memory device comprising:

• a plurality of memory components, each including a first electrode, a memory layer, and a second electrode which are provided in that order;
• and
• a pulse application unit configured to selectively apply a voltage or current pulse to the plurality of memory components,
• wherein the memory layer includes
• an ion source layer containing aluminum (Al) together with at least one chalcogen element selected from the group consisting of tellurium (Te), sulfur (S), and selenium (Se), and
• a resistance variable layer provided between the ion source layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.