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US 8,427,858 B2Granted
Large array of upward pointinig p-i-n diodes having large and uniform current
AssigneeSanDisk 3D LLC
InventorScott Brad Herner
Life of this patent
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Abstract
A circuit is provided that includes a plurality of vertically oriented p-i-n diodes. Each p-i-n diode is coupled to a resistivity-switching element and includes a bottom heavily doped p-type region. When a voltage between about 1.5 volts and about 3.0 volts is applied across each p-i-n diode, a current of at least 1.5 microamps flows through 99 percent of the p-i-n diodes. Numerous other aspects are also provided.
Claims19
A circuit comprising:
- a plurality of vertically oriented p-i-n diodes, wherein each p-i-n diode is coupled to a resistivity-switching element and comprises a bottom heavily doped p-type region,
- wherein when a voltage between about 1.5 volts and about 3.0 volts is applied across each p-i-n diode, a current of at least 1.5 microamps flows through 99 percent of the p-i-n diodes.
A monolithic three-dimensional circuit comprising:
- a first circuit level comprising a plurality of vertically oriented p-i-n diodes, wherein each p-i-n diode is coupled to a resistivity-switching element and comprises a bottom heavily doped p-type region, and wherein when a voltage between about 1.5 volts and about 3.0 volts is applied across each p-i-n diode, a current of at least 1.5 microamps flows through 99 percent of the p-i-n diodes;
- and
- a second circuit level monolithically formed above the first circuit level.
A method comprising:
- forming a plurality of vertically oriented p-i-n diodes, wherein each p-i-n diode is coupled to a resistivity-switching element and comprises a bottom heavily doped p-type region,
- wherein when a voltage between about 1.5 volts and about 3.0 volts is applied across each p-i-n diode, a current of at least 1.5 microamps flows through 99 percent of the p-i-n diodes.
Dependencies are inferred from the claim text.