Display device with pixel portion and common connection portion having oxide semiconductor layers

A display device comprising:

• a first substrate comprising a pixel portion and a common connection portion;
• a second substrate comprising a first conductive layer;
• and
• a conductive particle interposed between the first substrate and the second substrate,
• wherein the pixel portion comprises:
• a gate electrode over the first substrate;
• a first insulating layer over the gate electrode;
• a first oxide semiconductor layer and a second oxide semiconductor layer over the first insulating layer;
• a second conductive layer over the first oxide semiconductor layer;
• a third conductive layer over the second oxide semiconductor layer;
• a third oxide semiconductor layer over the second and third conductive layers and the first insulating layer;
• a second insulating layer comprising a first contact hole formed over the third conductive layer, the second insulating layer over the second and third conductive layers and the third oxide semiconductor layer;
• and
• a fourth conductive layer over the second insulating layer and electrically connected to the third conductive layer through the first contact hole,
• wherein the common connection portion comprises:
• a fifth conductive layer over the first substrate, the fifth conductive layer formed using the same material as the gate electrode;
• a third insulating layer over the fifth conductive layer, the third insulating layer formed using the same material as the first insulating layer;
• a fourth insulating layer over the third insulating layer, the fourth insulating layer formed using the same material as the second insulating layer, the third and fourth insulating layers comprising a second contact hole formed over the fifth conductive layer;
• and
• a sixth conductive layer over the fourth insulating layer and electrically connected to the fifth conductive layer through the second contact hole, the sixth conductive layer formed using the same material as the fourth conductive layer,
• wherein the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprise at least one of indium, gallium, and zinc, and
• wherein the sixth conductive layer in the common connection portion is electrically connected to the first conductive layer through the conductive particle.

A display device comprising:

• a first substrate comprising a pixel portion and a common connection portion;
• a second substrate comprising a first conductive layer;
• and
• a conductive particle interposed between the first substrate and the second substrate,
• wherein the pixel portion comprises:
• a gate electrode over the first substrate;
• a first insulating layer over the gate electrode;
• a first oxide semiconductor layer and a second oxide semiconductor layer over the first insulating layer;
• a second conductive layer over the first oxide semiconductor layer;
• a third conductive layer over the second oxide semiconductor layer;
• a third oxide semiconductor layer over the second and third conductive layers and the first insulating layer;
• a second insulating layer comprising a first contact hole formed over the third conductive layer, the second insulating layer over the second and third conductive layers and the third oxide semiconductor layer;
• and
• a fourth conductive layer over the second insulating layer and electrically connected to the third conductive layer through the first contact hole,
• wherein the common connection portion comprises:
• a fifth conductive layer over the first substrate, the fifth conductive layer formed using the same material as the gate electrode;
• a third insulating layer over the fifth conductive layer, the third insulating layer formed using the same material as the first insulating layer;
• a fourth oxide semiconductor layer over the third insulating layer, the fourth oxide semiconductor layer formed using the same material as the first and second oxide semiconductor layers;
• a sixth conductive layer over the fourth oxide semiconductor layer, the sixth conductive layer formed using the same material as the second and third conductive layers;
• a fourth insulating layer comprising a second contact hole formed over the sixth conductive layer, the fourth insulating layer formed using the same material as the second insulating layer;
• and
• a seventh conductive layer over the fourth insulating layer and electrically connected to the sixth conductive layer through the second contact hole, the seventh conductive layer formed using the same material as the fourth conductive layer,
• wherein the first oxide semiconductor laver, the second oxide semiconductor layer, and the third oxide semiconductor layer comprise at least one of indium, gallium, and zinc, and
• wherein the seventh conductive layer in the common connection portion is electrically connected to the first conductive layer through the conductive particle.