US 8,427,220 B2Granted

Ringing suppression circuit

AssigneesDenso Corporation, Nippon Soken, Inc.

InventorsYouichirou Suzuki, Noboru Maeda, Hiroyuki Obata, Masakiyo Horie, Tomohisa Kishigami

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Abstract

A ringing suppression circuit for a communication circuit that performs communication through a transmission line includes a high side switch connected between a high potential reference point and a high side line of the transmission line, a low side switch connected between a low potential reference point and a low side line of the transmission line, and a ringing suppression section. The ringing suppression section turns on the high side switch based on a difference between a potential of the high side line and a potential applied to a control terminal of the high side switch. The ringing suppression section turns on the low side switch based on a difference between a potential of the low side line and potential applied to a control terminal of the low side switch.

Claims8

Dependent claims

A ringing suppression circuit for a communication circuit that is connected to a transmission line having a pair of high and low potential side signal lines to perform communication by transmitting a differential signal through the transmission line, the ringing suppression circuit comprising:

a high potential side switching element connected between a predetermined high potential reference point and the high potential side signal line;
a low potential side switching element connected between a predetermined low potential reference point and the low potential side signal line;
and
a ringing suppression section configured to turn on the high potential side switching element based on a difference between a potential of the high potential side signal line and a potential applied to a control terminal of the high potential side switching element, the ringing suppression section configured to turn on the low potential side switching element based on a difference between a potential of the low potential side signal line and a potential applied to a control terminal of the low potential side switching element, wherein
the high potential side switching element is an N-channel MOSFET having a gate as the control terminal, a drain connected to the high potential reference point, and a source connected to the high potential side signal line, and
the low potential side switching element is a P-channel MOSFET having a gate as the control terminal, a drain connected to the low potential reference point, and a source connected to the low potential side signal line.

3 more elements

a high potential side switching element connected between a predetermined high potential reference point and the high potential side signal line;
a low potential side switching element connected between a predetermined low potential reference point and the low potential side signal line;
and
a ringing suppression section configured to turn on the high potential side switching element based on a difference between a potential of the high potential side signal line and a potential applied to a control terminal of the high potential side switching element, the ringing suppression section configured to turn on the low potential side switching element based on a difference between a potential of the low potential side signal line and a potential applied to a control terminal of the low potential side switching element, wherein
the ringing suppression section includes a first potential adjuster circuit and a second potential adjuster circuit,
the first potential adjuster circuit is connected between the control terminal of the high potential side switching element and one of the high potential side signal line and the low potential side signal line to adjust the potential applied to the control terminal of the high potential side switching element,
the second potential adjuster circuit is connected between the control terminal of the low potential side switching element and the other of the high potential side signal line and the low potential side signal line to adjust the potential applied to the control terminal of the low potential side switching element,
the control terminal of the high potential side switching element is connected to the low potential side signal line, and
the control terminal of the low potential side switching element is connected to the high potential side signal line.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/004,916Filed 12 Jan 2011
Priority: JP 2010-00589414 Jan 2010
Published: US 2011/0169547 A114 Jul 2011
Granted: 23 Apr 2013
Term ends: Not estimatedThe source records don’t support an estimate.

Classification5 codes

H03K 17/16
Electronic switching or gating, i.e. not by contact-making and –breaking: modifications for eliminating interference voltages or currents
H03K 19/00361
Modifications for eliminating interference or parasitic voltages or currents: in field effect transistor circuits
H04L 25/028
Arrangements for coupling to transmission lines: arrangements specific to the transmitter end
H03K
Pulse technique