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US 8,427,200 B2Granted
3D semiconductor device
AssigneeMonolithic 3D Inc.
InventorZvi Or-Bach
Life of this patent
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Abstract
A semiconductor device includes a first mono-crystallized semiconductor layer; and a second mono-crystallized semiconductor layer; wherein said first and second mono-crystallized semiconductor layers are overlaying one on top of the other, and wherein said first mono-crystallized semiconductor layer comprise repeating memory structure with sub structures defined by etching.
Claims29
A method to construct semiconductor device, comprising:
- forming a first mono-crystallized semiconductor layer and a second mono-crystallized semiconductor layer;
- wherein said second mono-crystallized semiconductor layer overlay said first mono-crystallized semiconductor layer, and
- wherein said first mono-crystallized semiconductor layer comprises logic circuits and,
- connecting said logic to external device using input output (I/O) circuits constructed on said second mono-crystallized semiconductor layer above said logic circuits.
1 more element
A method to construct semiconductor device, comprising;
- forming a first mono-crystallized semiconductor layer and a second mono-crystallized semiconductor layer;
- wherein said first and second mono-crystallized semiconductor layers overlay one on top of the other, and
- applying one or more masks used to construct said device to construct another device having different size.
A method to construct semiconductor device, comprising:
- forming first and second mono-crystallized semiconductor layers,
- wherein said first and second mono-crystallized semiconductor layers are overlaying one on top of the other, and
- performing an etch step to form dice lines.
Dependencies are inferred from the claim text.