Plasma monitoring method

A plasma monitoring method comprising:

• preparing a first sensor having two first electrodes formed in a first pattern, with a resistance element being connected between first wires respectively extending from the first electrodes;
• preparing a second sensor having two second electrodes formed in a second pattern, with second wires respectively extending from the second electrodes;
• and
• measuring in-situ a resistance of a side wall of each of the first and second patterns and/or an electric current flowing in the side wall of each of the first and second patterns during plasma processing, using said first and second sensors,
• wherein a low-pass filter or a choke coil is provided on at least one of the first and second wires.

A plasma monitoring method comprising:

• preparing a sensor that is disposed in a plasma chamber and has two electrodes formed in a pattern;
• preparing a resistance element that is electrically connected between the two electrodes of the sensor;
• and
• measuring in-situ a voltage in the pattern of the sensor, using the sensor and the resistance element during plasma processing;
• changing a resistance value of the resistance element;
• and
• measuring in-situ the voltage in the pattern of the sensor during the plasma processing using the sensor and the resistance element having the changed resistance value,
• wherein the pattern has at least one contact hole, one of the two electrodes is located at an upper end of the contact hole and the other of the two electrodes is located at a lower end of the contact hole.