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US 8,426,975 B2Granted
Semiconductor device having wiring layer with a wide wiring and fine wirings
AssigneeRenesas Electronics Corporation
InventorDaisuke Oshida
Life of this patent
Estimating the term…
Abstract
Provided is a semiconductor device having a wiring layer formed of damascene wiring. The semiconductor device includes: a first wiring having a width equal to or larger than 0.5 μm; a second wiring adjacent to the first wiring and arranged with a space less than 0.5 μm from the first wiring; and a third wiring adjacent to the second wiring and arranged with a space equal to or smaller than 0.5 μm from the first wiring. In the semiconductor device, the second wiring and the third wiring are structured to have the same electric potential.
Claims15
A semiconductor device comprising:
- an interlayer insulating film having a first wiring trench, a second wiring trench adjacent to the first wiring trench in a first direction and a third wiring trench adjacent to the second wiring trench in the first direction;
- a first wiring formed in the first wiring trench having a width, in the first direction, equal to or larger than 0.5 μm;
- a second wiring formed in the second wiring trench arranged with a non-zero space less than 0.5 μm from the first wiring trench;
- and
- a third wiring formed in the third wiring trench arranged with a non-zero space equal to or smaller than 0.5 μm from the first wiring trench,
- wherein the second wiring and the third wiring are structured to have the same electric potential.
3 more elements
A semiconductor device comprising:
- an interlayer insulating film having a first wiring trench, a second wiring trench adjacent to the first wiring trench in a first direction and a third wiring trench adjacent to the second wiring trench in the first direction;
- a first wiring formed in the first wiring trench having a width, in the first direction, equal to or larger than 0.5 μm;
- a second wiring formed in the second wiring trench;
- and
- a third wiring formed in the third wiring trench arranged, in the first direction, with a non-zero space equal to or smaller than 0.5 μm from the first wiring trench such that the second wiring trench is arranged, in the first direction, between the first wiring trench and the third wiring trench, wherein the second wiring and the third wiring are structured to have the same electric potential.
2 more elements
Dependencies are inferred from the claim text.