Semiconductor device and method for manufacturing the same
AssigneeToyota Jidosha Kabushiki Kaisha
InventorKeisuke Kimura
Life of this patent
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Abstract
A semiconductor device has: a semiconductor substrate; and an upper surface electrode laminated on an upper surface of the semiconductor substrate, wherein at least one portion of the upper surface electrode includes a first layer formed on an upper surface side of the semiconductor substrate, a second layer formed on an upper surface side of the first layer, a third layer in contact with the upper surface of the second layer, and a fourth layer formed on an upper surface side of the third layer. The first layer is a barrier metal layer. The second layer is an Al (aluminum) layer. The third layer is one of an Al—Si (aluminum-silicon alloy) layer, an Al—Cu (aluminum-copper alloy) layer and an Al—Si—Cu (aluminum-silicon-copper alloy) layer. The fourth layer is a solder joint layer.
Claims2
A semiconductor device comprising:
- a semiconductor substrate;
- and
- an upper surface electrode laminated on an upper surface of the semiconductor substrate, wherein
- at least one portion of the upper surface electrode includes a first layer formed on an upper surface side of the semiconductor substrate, a second layer formed on an upper surface side of the first layer, a third layer in contact with the upper surface of the second layer, and a fourth layer formed on an upper surface side of the third layer,
- the first layer is a barrier metal layer;
- the second layer is an Al layer;
- the third layer is one of an Al—Si layer, an Al—Cu layer and an Al—Si—Cu layer;
- and
- the fourth layer is a solder joint layer.
A method for manufacturing a semiconductor device comprising a semiconductor substrate and an upper surface electrode laminated on an upper surface of the semiconductor substrate,
- the method comprising:
- forming a first layer by a barrier metal on the upper surface of the semiconductor substrate;
- forming a second layer by an aluminum on an upper surface of the first layer after forming a first layer;
- forming a third layer by one of an Al—Si, an Al—Cu and an Al—Si—Cu on an upper surface of the second layer after forming the second layer;
- performing zinc substitution treatment on an upper surface of the third layer after forming the third layer;
- and
- forming a fourth layer, which is a solder joint layer, on the upper surface of the third layer by nonelectrolytic plating after performing zinc substitution treatment.
Dependencies are inferred from the claim text.