Laminated semiconductor wafer, laminated chip package and method of manufacturing the same

A laminated semiconductor wafer, comprising:

• a plurality of semiconductor substrates having a plurality of scribe-groove parts formed along scribe lines,
• each of the plurality of semiconductor substrates including:
• a plurality of device regions insulated from each other, each of which is in contact with at least one of the plurality of scribe-groove parts and has a semiconductor device formed therein;
• a wiring electrode connected to the semiconductor device formed in each of the device regions and extending from the device region to the inside of the scribe-groove part,
• wherein each of an uppermost substrate laminated on the top side and a lowermost substrate laminated on the bottom side in the plurality of semiconductor substrates has an electromagnetic shielding layer formed using a ferromagnetic body, and the electromagnetic shielding layer is formed at corresponding positions respectively corresponding to the plurality of device regions in a second surface in surfaces of the semiconductor substrate, the second surface is a surface of the rear surface side of a first surface where the plurality of device regions are formed.

A laminated chip package, comprising:

• a plurality of semiconductor chips having a semiconductor device,
• each of the plurality of semiconductor chips including:
• a resin insulating layer made of an insulating resin formed to surround the semiconductor chip;
• a device region inside the resin insulating layer having the semiconductor device formed therein;
• and
• a wiring electrode connected to the semiconductor device and extending from the device region to the upside of the resin insulating layer,
• wherein when a part, in a peripheral edge part of the device region along the resin insulating layer, which the wiring electrode crosses is an extending zone, each of an uppermost chip laminated on the top side and a lowermost chip laminated on the bottom side of the plurality of semiconductor chips has an electromagnetic shielding layer formed using a ferromagnetic body, and the electromagnetic shielding layer is formed in a shielding region except the extending zone on a first surface, in surfaces of the semiconductor chip, where the device region is formed.

A laminated chip package, comprising:

• a plurality of semiconductor chips having a semiconductor device,
• each of the plurality of semiconductor chips including:
• a resin insulating layer made of an insulating resin formed to surround the semiconductor chip;
• a device region inside the resin insulating layer having the semiconductor device formed therein;
• and
• a wiring electrode connected to the semiconductor device and extending from the device region to the upside of the resin insulating layer,
• wherein each of an uppermost chip laminated on the top side and a lowermost chip laminated on the bottom side of the plurality of semiconductor chips has an electromagnetic shielding layer formed using a ferromagnetic body, and the electromagnetic shielding layer is formed at a corresponding position corresponding to the device region in a second surface in surfaces of the semiconductor chip, the second surface is a surface of the rear surface side of a first surface where the device region is formed.

A method of manufacturing a laminated semiconductor substrate, comprising:

• a groove part forming step of forming a plurality of scribe-groove parts along scribe lines in a first surface where semiconductor devices are formed, in all of a plurality of unprocessed substrates having the semiconductor devices formed thereon;
• a wiring electrode forming step of forming a wiring electrode connected to the semiconductor device and extending from the device region in contact with at least one of the plurality of scribe-groove parts to the inside of the scribe-groove part;
• an electromagnetic shielding layer forming step of forming,
• when a part, in a peripheral edge part of the device region along the scribe-groove part, which the wiring electrode crosses is an extending zone,
• an electromagnetic shielding layer in surfaces of the unprocessed substrate where the plurality of device regions are formed using a ferromagnetic body in shielding regions,
• wherein the electromagnetic shielding layer is formed in at least two of the plurality of unprocessed substrates, and
• the electromagnetic shielding layer is not formed on the extending zones on the first region;
• and
• a lamination step of laminating the plurality of unprocessed substrates such that substrates with shielding layer having the electromagnetic shielding layer in the unprocessed substrates are arranged on the top and the bottom respectively.

A method of manufacturing a laminated semiconductor substrate, comprising:

• a groove part forming step of forming a plurality of scribe-groove parts along scribe lines in a first surface where semiconductor devices are formed, in all of a plurality of unprocessed substrates having the semiconductor devices formed thereon;
• a wiring electrode forming step of forming a wiring electrode connected to the semiconductor device and extending from the device region in contact with at least one of the plurality of scribe-groove parts to the inside of the scribe-groove part;
• an electromagnetic shielding layer forming step of polishing a second surface on the rear surface side of the first surface where the device regions are formed until the scribe-groove parts appear, and then forming an electromagnetic shielding layer using a ferromagnetic body at corresponding positions respectively corresponding to the plurality of device regions in the second surface, in at least two of the plurality of unprocessed substrates;
• and
• a lamination step of laminating the plurality of unprocessed substrates such that substrates with shielding layer having the electromagnetic shielding layer in the plurality of unprocessed substrates are arranged on the top and the bottom respectively.