Back to results
US 8,426,943 B2Granted
Semiconductor device having e-fuse structure and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorDeok-Kee Kim
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes: an e-fuse gate, a floating pattern between the e-fuse gate and an e-fuse active portion, a blocking dielectric pattern between the floating pattern and the e-fuse gate, and an e-fuse dielectric layer between the floating pattern and the e-fuse active portion. The floating pattern includes a first portion between the e-fuse gate and the e-fuse active portion and a pair of second portions extended upward along both sidewalls of the e-fuse gate from both edges of the first portion.
Claims17
A semiconductor device, comprising:
- an e-fuse gate crossing over an e-fuse active portion of a substrate;
- a floating pattern including a first portion between the e-fuse gate and the e-fuse active portion, and a pair of second portions extending upward along sidewalls of the e-fuse gate;
- a blocking dielectric pattern between the floating pattern and the e-fuse gate;
- and
- an e-fuse dielectric layer between the floating pattern and the e-fuse active portion.
2 more elements
Dependencies are inferred from the claim text.