Semiconductor device and method for manufacturing of the same
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsWoo Chul Jeon, Jung Hee Lee, Young Hwan Park, Ki Yeol Park
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Abstract
The present invention provides a semiconductor device including: a base substrate; a first semiconductor layer which is disposed on the base substrate and has a front surface and a rear surface opposite to the front surface; first ohmic electrodes disposed on the front surface of the first semiconductor layer; a second ohmic electrode disposed on the rear surface of the first semiconductor layer; a second semiconductor layer interposed between the first semiconductor layer and the first ohmic electrodes; and a Schottky electrode part which covers the first ohmic electrodes on the front surface of the first semiconductor layer.
Claims11
A semiconductor device comprising:
- a base substrate;
- a first semiconductor layer which is disposed on the base substrate and has a front surface and a rear surface opposite to the front surface;
- first ohmic electrodes disposed on the front surface of the first semiconductor layer;
- a second ohmic electrode disposed on the rear surface of the first semiconductor layer;
- a second semiconductor layer interposed between the first semiconductor layer and the first ohmic electrodes;
- and
- a Schottky electrode part which covers the first ohmic electrodes on the front surface of the first semiconductor layer,
- wherein the Schottky electrode part is extended to into the first semiconductor layer, and a bottom surface of the Schottky electrode part is lower than a top surface of the second semiconductor layer.
Dependencies are inferred from the claim text.