Back to results
US 8,426,938 B2Granted
Image sensor and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsByung Jun Park, Yong Woo Lee, Chang Rok Moon
Life of this patent
Estimating the term…
Abstract
The image sensor includes a substrate, an insulating structure formed on a first surface of the substrate and including a first metal wiring layer exposed by a contact hole penetrating the substrate, a conductive spacer formed on sidewalls of the contact hole and electrically connected to the first metal wiring layer, and a pad formed on a second surface of the substrate and electrically connected to the first metal wiring layer.
Claims8
An image sensor comprising:
- a substrate;
- an insulating structure formed on a first surface of the substrate and including a first metal wiring layer exposed by a contact hole penetrating the substrate;
- a conductive spacer formed on sidewalls of the contact hole and electrically connected to the first metal wiring layer;
- an insulating spacer formed between the sidewalls of the contact hole and the conductive spacer, the insulating spacer directly contacting the first metal wiring layer;
- and
- a conductive pattern formed on a second surface of the substrate and electrically connected to the first metal wiring layer, the conductive pattern including a pad and a contact, the contact directly contacting the first metal wiring layer on a bottom surface of the contact hole.
3 more elements
An image sensor comprising:
- a semiconductor substrate including a pad region, an optical black (OB) region, and a sensing region;
- an insulating structure formed on a first surface of the substrate and including a first metal wiring layer exposed by a contact hole penetrating the semiconductor substrate;
- a conductive pattern formed on a second surface of the semiconductor substrate in the pad region and electrically connected to the first metal wiring layer, the conductive pattern including a pad and a contact integrally formed on the second surface of the substrate, the contact directly contacting the first metal wiring layer on a bottom surface of the contact hole;
- a blocking film formed on the insulating structure in the OB region and at the same height as the pad to cover the OB region;
- and
- a first passivation film formed between the second surface of the semiconductor substrate and the conductive pattern.
3 more elements
Dependencies are inferred from the claim text.