Spin transport type magnetic sensor
AssigneeTDK Corporation
InventorsTomoyuki Sasaki, Tohru Oikawa, Kiyoshi Noguchi
Life of this patent
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Abstract
The magnetic sensor includes a base substrate having a magnetic shield layer; a single-domain semiconductor crystal layer attached via an insulating film on the magnetic shield layer of the base substrate; a first ferromagnetic layer formed on top of the semiconductor crystal layer on the opposite side of the semiconductor crystal layer to the insulating film, via a first tunnel barrier layer; and a second ferromagnetic layer formed, at a distance from the first ferromagnetic layer, on top of the semiconductor crystal layer on the opposite side of the semiconductor crystal layer to the insulating film, via a second tunnel barrier layer.
Claims11
A magnetic sensor comprising:
- a base substrate having a magnetic shield layer;
- a single-domain semiconductor crystal layer attached via an insulating film on the magnetic shield layer of the base substrate;
- a first ferromagnetic layer formed on top of the semiconductor crystal layer on the opposite side of the semiconductor crystal layer to the insulating film, via a first tunnel barrier layer;
- and
- a second ferromagnetic layer formed, at a distance from the first ferromagnetic layer, on top of the semiconductor crystal layer on the opposite side of the semiconductor crystal layer to the insulating film, via a second tunnel barrier layer.
Dependencies are inferred from the claim text.