Penetrating implant for forming a semiconductor device

A semiconductor device, comprising:

• a gate stack disposed on a substrate;
• tip regions comprising dopant impurity atoms of a first conductivity type disposed in the substrate on either side of the gate stack;
• halo regions comprising dopant impurity atoms of a second conductivity type, opposite the first conductivity type, disposed in the substrate adjacent the tip regions;
• and
• a threshold voltage implant region comprising dopant impurity atoms of the second conductivity type disposed in the substrate directly below the gate stack, wherein the concentration of dopant impurity atoms of the second conductivity type in the threshold voltage implant region is approximately the same as the concentration of dopant impurity atoms of the second conductivity type in the halo regions, wherein
• the threshold voltage implant region and both the halo regions forming a single continuous region beneath the entire gate stack.