US 8,426,925 B2 · Memory device and method of fabricating the same

Abstract

A memory device includes a plurality of isolations and trench fillers arranged in an alternating manner in a direction, a plurality of mesa structures between the isolations and trench fillers, and a plurality of word lines each overlying a side surface of the respective mesa. In one embodiment of the present invention, the width measured in the direction of the trench filler is smaller than that of the isolation, each mesa structure includes at least one paired source/drain regions and at least one channel base region corresponding to the paired source/drain regions, and each of the word lines is on a side surface of the mesa structure, adjacent the respective isolation, and is arranged adjacent the channel base region.

Claims16

Dependent claims

A memory device, comprising:

a plurality of isolations and a plurality of trench fillers arranged in an alternating manner in a direction, wherein a width, measured in the direction, of the trench filler is smaller than that of the isolation;
a plurality of mesa structures between the plurality of isolations and the plurality of the trench fillers, each mesa structure including at least one paired source/drain regions and at least one channel base region corresponding to the paired source/drain regions;
and
a plurality of word lines each overlying a side surface, adjacent the respective isolation, of the respective mesa structure, and arranged adjacent the channel base region.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

12/945,536Filed 12 Nov 2010

Published

US 2012/0119277 A117 May 2012

Granted

23 Apr 2013

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10W 10/014
Of isolation regions comprising dielectric materials: using trench refilling with dielectric materials, e.g. shallow trench isolations
H10B 12/053
Making the transistor: the transistor being at least partially in a trench in the substrate
H10B 12/488
Data lines or contacts therefor: word lines
H10W 10/17
Isolation regions comprising dielectric materials: formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Memory device and method of fabricating the same

Life of this patent

Memory device and method of fabricating the same

Life of this patent

Abstract

Claims16