Back to results
US 8,426,923 B2Granted
Multiple-gate semiconductor device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTung Ying Lee, Li-Wen Weng, Chien-Tai Chan, Da-Wen Lin, Hsien-Chin Lin
Life of this patent
Estimating the term…
Abstract
A system and method for manufacturing multiple-gate semiconductor devices is disclosed. An embodiment comprises multiple fins, wherein intra-fin isolation regions extend into the substrate less than inter-fin isolation regions. Regions of the multiple fins not covered by the gate stack are removed and source/drain regions are formed from the substrate so as to avoid the formation of voids between the fins in the source/drain region.
Claims20
A semiconductor device comprising:
- a substrate comprising a first fin and a second fin;
- a first isolation region located between the first fin and the second fin;
- a second isolation region located opposite the first fin from the first isolation region, the second isolation region extending into the substrate further than the first isolation region;
- and
- a continuous source/drain region extending from the first fin to the second fin, a portion of the continuous source/drain region between the first fin and the second fin extending below a top surface of the first isolation region.
2 more elements
A semiconductor device comprising:
- a substrate comprising a plurality of fins;
- a first multiple-gate transistor formed from a first one of the plurality of fins and a second multiple-gate transistor formed from a second one of the plurality of fins, wherein the first multiple-gate transistor and second multiple-gate transistor share a source/drain region that comprises a first section that extends along a spacer adjacent to a gate stack from the first multiple-gate transistor to the second multiple-gate transistor, the first section comprising a semiconductor material;
- a first isolation region located between the first multiple-gate transistor and the second multiple-gate transistor, the first isolation region extending into the substrate a first distance;
- and
- a second isolation region located adjacent the first multiple-gate transistor and outside of a region between the first multiple-gate transistor and the second multiple-gate transistor, the second isolation region extending into the substrate a second distance greater than the first distance.
2 more elements
A semiconductor device comprising:
- a first fin extending from a substrate;
- a second fin extending from the substrate, a first region being located between the first fin and the second fin and a second region being located adjacent the first second fin opposite the first region;
- a semiconductor material in contact with the substrate and connecting the first fin to the second fin;
- a first isolation material in the first region, the first isolation material having a first thickness and having a top surface that extends above a bottom surface of the semiconductor material;
- and
- a second isolation material in the second region, the second isolation material having a second thickness different than the first thickness.
3 more elements
Dependencies are inferred from the claim text.