US 8,426,918 B2 · Semiconductor device

Abstract

An object is to reduce the resistance of each member included in a transistor, to improve ON current of the transistor, and to improve performance of an integrated circuit. A semiconductor device including an n-channel FET and a p-channel FET which are provided over a single crystal semiconductor substrate with an insulating layer interposed therebetween and are isolated by an element isolation insulating layer. In the semiconductor device, each FET includes a channel formation region including a semiconductor material, a conductive region which is in contact with the channel formation region and includes the semiconductor material, a metal region in contact with the conductive region, a gate insulating layer in contact with the channel formation region, a gate electrode in contact with the gate insulating layer, and a source or drain electrode partly including the metal region.

Claims20

Dependent claims

A semiconductor device comprising:

a semiconductor layer comprising a channel formation region and a conductive region, the channel formation region and the conductive region comprising a semiconductor material and being in contact with each other;
a metal region in contact with the conductive region;
a gate insulating layer in contact with the channel formation region;
a gate electrode in contact with the gate insulating layer;
and
a source or drain electrode partly comprising the metal region,
wherein the semiconductor layer is formed by bonding a bond substrate including an embrittlement region irradiated with H+ ions to a base substrate with an insulating layer interposed therebetween and by separating a part of the bond substrate from the embrittlement region.

4 more elements

A semiconductor device comprising:

a semiconductor layer comprising a channel formation region and a conductive region, the channel formation region and the conductive region comprising a semiconductor material and being in contact with each other;
a first metal compound region which is in contact with the conductive region and comprises a metal compound comprising a metal element and the semiconductor material;
a first metal region comprising the metal element, and in contact with the first metal compound region;
a gate insulating layer in contact with the channel formation region;
a gate electrode in contact with the gate insulating layer;
and
a source or drain electrode partly comprising the first metal region,
wherein the semiconductor layer is formed by bonding a bond substrate including an embrittlement region irradiated with H+ ions to a base substrate with an insulating layer interposed therebetween and by separating a part of the bond substrate from the embrittlement region.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims20