Body-tied asymmetric P-type field effect transistor
AssigneeInternational Business Machines Corporation
InventorsJeffrey W. Sleight, Chung-Hsun Lin, Josephine B. Chang, Leland Chang
Life of this patent
Estimating the term…
Abstract
In one exemplary embodiment of the invention, an asymmetric P-type field effect transistor includes: a source region coupled to a drain region via a channel; a gate structure overlying at least a portion of the channel; a halo implant disposed at least partially in the channel, where the halo implant is disposed closer to the source region than the drain region; and a body-tie coupled to the channel. In a further exemplary embodiment, the asymmetric P-type field effect transistor is operable to act as a symmetric P-type field effect transistor.
Claims21
A method for forming an asymmetric P-type field effect transistor comprising:
- forming a source region and a drain region coupled thereto via a channel;
- forming a gate structure overlying at least a portion of the channel;
- performing an angled implant to form a halo implant disposed at least partially in the channel, where asymmetry in the asymmetric P-type field effect transistor is at least partially due to the halo implant being disposed closer to the source region than the drain region, where the halo implant is partially disposed in the source region;
- and
- forming a body-tie coupled to the channel, where the asymmetric P-type field effect transistor is operable to act as a symmetric P-type field effect transistor due to the body-tie and the halo implant.
An asymmetric P-type field effect transistor comprising:
- a drain region;
- a channel;
- a source region coupled to the drain region via the channel;
- a gate structure overlying at least a portion of the channel;
- a halo implant disposed at least partially in the channel, where asymmetry in the asymmetric P-type field effect transistor is at least partially due to the halo implant being disposed closer to the source region than the drain region, where the halo implant is partially disposed in the source region;
- and
- a body-tie coupled to the channel, where the asymmetric P-type field effect transistor is operable to act as a symmetric P-type field effect transistor due to the body-tie and the halo implant.
A semiconductor device comprising a plurality of asymmetric P-type field effect transistors, where each one of the plurality of asymmetric P-type field effect transistors comprises a drain region, a channel, a source region coupled to the drain region via the channel, a gate structure overlying at least a portion of the channel, a halo implant disposed at least partially in the channel, and a body-tie coupled to the channel, where asymmetry in the asymmetric P-type field effect transistor is at least partially due to the halo implant being disposed closer to the source region than the drain region, where the halo implant is partially disposed in the source region, where the asymmetric P-type field effect transistor is operable to act as a symmetric P-type field effect transistor due to the body-tie and the halo implant.
An asymmetric P-type field effect transistor comprising a source region, a drain region, a N-type channel, a halo implant disposed at least partially in the N-type channel, a source extension implant, a drain extension implant, a gate structure and a body-tie, where asymmetry in the asymmetric P-type field effect transistor is at least partially due to the halo implant being disposed closer to the source region than the drain region, where the halo implant is partially disposed in the source region, where the asymmetric P-type field effect transistor is operable to act as a symmetric P-type field effect transistor due to the body-tie and the halo implant, where the source extension implant is coupled to the source region and the drain extension implant is coupled to the drain region, where the source extension implant and the drain extension implant are asymmetrically disposed with the source extension implant being larger than the drain extension implant.
Dependencies are inferred from the claim text.