Nonvolatile semiconductor memory device and method of manufacturing the same

A nonvolatile semiconductor memory device including a first region having a plurality of electrically rewritable memory cells disposed therein, and a second region adjacent to the first region, the nonvolatile semiconductor memory device comprising:

• a plurality of first conductive layers stacked in the first region and the second region and including a stepped portion in the second region, positions of ends of the plurality of first conductive layers being different in the stepped portion;
• an insulating columnar layer surrounded by the first conductive layers in the stepped portion, and including a second columnar portion extending in the stacking direction and comprising an insulator;
• a plurality of second conductive layers formed in the same layer as the first conductive layers and positioned on an upper portion of each of steps of the stepped portion;
• and
• a contact layer extending in the stacking direction from the first conductive layers,
• the plurality of second conductive layers being formed in a periphery of the insulating columnar layer and being formed such that at least one of the plurality of second conductive layers is in contact with at least one of the first conductive layers, and
• the contact layer being provided separated from the at least one of the plurality of second conductive layers in contact with the at least one of the first conductive layers.