Method and structure for a semiconductor charge storage device

A charge storage device comprising:

• a semiconductor substrate having a surface region;
• a charge trapping material overlying and in direct contact with the surface region of the semiconductor substrate, the charge trapping material being characterized by a first dielectric constant which is higher than a dielectric constant associated with silicon oxide, the charge trapping material being also characterized by a first charge trapping capability;
• a dielectric material being formed by converting a portion of the charge trapping material;
• an interface charge trapping region between the dielectric material and the charge trapping material;
• and
• a conductive material overlying the dielectric material, the conductive material being capable of receiving an electrical signal to cause electrical charges being trapped in the charge storage device;
• wherein the charge trapping material, the interface charge trapping region, and the dielectric material form a composite dielectric characterized by a second charge trapping capability, the second charge trapping capability being higher than the first charge trapping capability;
• wherein the first and the second charge trapping capabilities are associated with threshold voltage shifts caused by electrical charges being trapped in the charge storage device.

A charge storage device comprising:

• a semiconductor substrate having a surface region;
• a charge trapping material overlying the surface region of the semiconductor substrate, the charge trapping material being characterized by a first dielectric constant which is higher than a dielectric constant associated with silicon oxide, the charge trapping material being also characterized by a first charge trapping capability;
• a dielectric material being formed by converting a portion of the charge trapping material;
• an interface charge trapping region between the dielectric material and the charge trapping material;
• and
• a conductive material overlying the dielectric material, the conductive material being capable of receiving an electrical signal to cause electrical charges being trapped in the charge storage device;
• wherein the charge trapping material, the interface charge trapping region, and the dielectric material form a composite dielectric characterized by a second charge trapping capability, the second charge trapping capability being higher than the first charge trapping capability;
• wherein the first and the second charge trapping capabilities are associated with threshold voltage shifts caused by electrical charges being trapped in the charge storage device.