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US 8,426,896 B2Granted
Solid state imaging device
AssigneeSony Corporation
InventorTetsuro Kumesawa
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Abstract
A solid state imaging device in which γ characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device of the present invention includes a vertical overflow function and has a feature in which potential of a semiconductor substrate is changed from a high potential to a low potential in a stepwise manner during a period from an exposure start to an exposure end.
Claims9
A solid state imaging device having a vertical overflow function comprising:
- a semiconductor substrate;
- a photosensor portion formed on the substrate and including a p+ type charge accumulation region;
- and
- a substrate voltage controller configured to change a potential of the semiconductor substrate during a light acceptance period, wherein the solid state imaging device is a CMOS image sensor.
1 more element
Dependencies are inferred from the claim text.