Semiconductor device and manufacturing method of the same

A method of manufacturing a semiconductor device, the method comprising:

• forming a first n-type conductive layer, a p-type conductive layer, and a second n-type conductive layer on a substrate;
• forming a drain electrode connected to the first n-type conductive layer on an under surface of the substrate;
• forming a source electrode in ohmic contact with the second n-type conductive layer on an upper surface of the substrate;
• connecting a gate electrode to the first n-type conductive layer, the p-type conductive layer, and the second n-type conductive layer through an insulation film;
• and
• arranging the gate electrode and the source electrode alternately, wherein
• the p-type conductive layer and the first n-type conductive layer each comprise InyGa1-yN (0<y≦1), and
• the second n- type conductive layer comprises Alx Ga1-xN(0<x≦1), which is different from the p-type conductive layer and the first n-type conductive layer.

A semiconductor device comprising:

• a substrate;
• a first conductive layer having a first conductivity type and comprising a material including a nitride of a first type;
• a second conductive layer having a second conductivity type, the second conductive layer being formed on the first conductive layer;
• a third conductive layer having the first conductivity type and comprising a material including a nitride of a second type, the third conductive layer being formed on the second conductive layer;
• a drain electrode connected to the first conductive layer on a first surface of the substrate;
• a source electrode in ohmic contact with the third conductive layer on a second surface of the substrate;
• and
• a gate electrode in contact with the first conductive layer, the second conductive layer, and the third conductive layer through an insulation film, the gate electrode is alternately arranged with the source electrode.